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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
60N03
Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Drain Current - Continuous @ TA = 25°C
Drain Current - Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage
Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
30
±20
60*
120
75
- 55 to
150
Vdc
Vdc
Adc
Watts
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting TJ = 25°C
(VDD = 28 Vdc, VGS = 10 Vdc,
IL = 17 Apk, L = 5.0 mH, RG = 25 W)
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
733 mJ
°C/W
1.65
67
120
260 °C
1. When surface mounted to an FR4 board using 1pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.
60 AMPERES
30 VOLTS
RDS(on) = 9.0 mW (Typ.)
N-Channel
D
G
12
3
4
4
S
1 23
1

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60N03
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 24 Vdc)
Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain-to-Source On-Resistance (Note 3)
(VGS = 10 Vdc, ID = 35 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 3)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
Gate Charge
(VDD = 15 Vdc, ID = 15 Adc,
VGS = 10 Vdc,
RG = 3.3 W)
(VDS = 24 Vdc, ID = 15 Adc,
VGS = 4.5 Vdc) (Note 3)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(IS = 2.3 Adc, VGS = 0 Vdc) (Note 3)
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 2.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
Qrr
Min Typ Max Unit
30 - Vdc
- - 50 nAdc
- - ±100 nAdc
1.0 1.9
- -3.8
2.0 Vdc
- mV/°C
9.0 mW
15.0
- 20 - Mhos
-
2150
-
- 680 -
- 260 -
pF
- 10 -
- 18 -
- 32 -
- 15 -
- 30 -
- 6.5 -
- 18.4 -
ns
nC
Vdc
- 0.75 1.0
- 1.2 -
- 0.65 -
- 39 - ns
- 21 -
- 18 -
-
0.043
-
mC
2

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60N03
50
3.8 V
TJ = 25°C
10 V
40 8 V
6V
3.6 V
5V
30 4.5 V
4V
3.4 V
20
3.2 V
10
0
0
3V
VGS = 2.8 V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
60
VDS 10 V
50
40
30 TJ = 25°C
20
TJ = 125°C
10
TJ = -55°C
0
23
45
VGS, GATE-T O-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID = 10 A
TJ = 25°C
0.015
TJ = 25°C
0.01
0.005
VGS = 4.5 V
VGS = 10 V
2 468
VGS, GATE-T O-SOURCE VOLTAGE (V)
Figure 3. On-Resistance versus
Gate-T o-Source Voltage
10
0
5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
1.8
ID = 30 A
1.6 VDS = 10 V
1.4
1.2
1000
VGS = 0 V
100
TJ = 125°C
TJ = 100°C
1.0 10
0.8
0.6
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
1
4
8 12 16
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-To-Source Leakage
Current versus Voltage
20
3

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60N03
5000
4500 Ciss
4000
TJ = 25°C
3500
3000 Crss
2500
2000
Ciss
1500
1000
Coss
500
0 VDS = 0 V VGS = 0 V
Crss
15 10
5 VGS 0 VDS 5
10 15 20 25
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
8
6
4 Q1
QT
Q2
VGS
2
ID = 15 A
TJ = 25°C
0
0 8 16 24 32
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
1000
100
VDD = 24 V
ID = 20 A
VGS = 10 V
tf
td(off)
tr
10 td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
5
4
VGS = 0 V
TJ = 25°C
3
2
1
0
0.1 0.3 0.5 0.7 0.9
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
4

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60N03
100
100 ms
VGS = 10 V
10 SINGLE PULSE
TC = 25°C
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
dc
PACKAGE LIMIT
1
0.1 1
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 12. Diode Reverse Recovery Waveform
1000
DUTY CYCLE
100 D = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
0.1
SINGLE PULSE
0.01
1E−05
1E−04
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RqJA(t) = r(t) RqJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
Figure 13. Thermal Response - Various Duty Cycles
5