60N03.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 60N03 데이타시트 다운로드

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CMD60N03/CMU60N03
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The 60N03 is N-channel MOSFET device
that features a low on-state resistance
and excellent switching characteristics,
and designed for low voltage high current
applications such as DC/DC converter with
synchronous rectifier.
Features
BVDSS
30V
RDSON
7m
ID
60A
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
DC/DC converter
Motor drives
Simple Drive Requirement
Low Gate Charge
Fast Switching
Ultra-Low RDS(on)
Green Device Available
Absolute Maximum Ratings
TO252 / TO251 Pin Configuration
GDS
TO252
(CMD60N03)
G DS
TO251
(CMU60N03)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
20
60
50
180
55
50
55
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient1
Thermal Resistance Junction -Case1
Typ.
---
---
Max.
52
2.73
Unit
/W
/W
1

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CMD60N03/CMU60N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=250uA
VGS=10V , ID=20A
VGS=4.5V , ID=20A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=150
VGS 20V , VDS=0V
VDS=5V, ID=10A
VGS=0.5V, f=1MHz
VDS=15V
ID=20A
VGS=4.5V
VDD=15V , VGS=10V , RGS=10
ID=20A
VDS=15V , VGS=0V , f=1MHz
Min.
30
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1
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Typ.
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0.012
5
9.5
2
-6
---
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45
2.3
15
4.4
7.3
10
100
45
38
1150
250
150
Max.
---
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7
13
3
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1
250
100
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Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=35A, TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=27V,VGS=10V,L=0.14mH,IAS=28A
Min.
---
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Typ.
---
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Max.
60
180
1.25
Unit
A
A
V
2