G10T60.pdf 데이터시트 (총 12 페이지) - 파일 다운로드 G10T60 데이타시트 다운로드

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IGP10N60T
TRENCHSTOPSeries
q
Low Loss IGBT : IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Variable Speed Drive for washing machines and air conditioners
- induction cooking
- Uninterrupted Power Supply
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3
Type
IGP10N60T
VCE
600V
IC
10A
VCE(sat),Tj=25°C Tj,max Marking Code
Package
1.5V
175C G10T60 PG-TO-220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Value
600
24
18
30
30
20
5
110
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 30.04.2015

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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction case
Thermal resistance,
junction ambient
IGP10N60T
TRENCHSTOPSeries
q
Symbol
RthJC
RthJA
Conditions
Max. Value
1.35
62
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=10A
Tj=25C
Tj=175C
IC=0.3mA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=10A
min.
600
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.8
4.6
-
-
-
6
none
Unit
max.
-V
2.05
-
5.7
µA
40
1000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE=0V,
f=1MHz
- 551 - pF
- 40 -
- 17 -
Gate charge
QGate
VCC=480V, IC=10A
-
62
- nC
VGE=15V
Internal emitter inductance
LE TO-220-3-1
- 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
-
100
-A
VCC = 400V,
Tj = 25C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 30.04.2015

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IGP10N60T
TRENCHSTOPSeries
q
Switching Characteristic 3), Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKP10N60T
min.
-
-
-
-
-
-
-
Value
typ.
12
8
215
38
0.16
0.27
0.43
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic 3), Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=175C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKP10N60T
min.
-
-
-
-
-
-
-
Value
typ.
10
11
233
63
0.26
0.35
0.61
Unit
max.
- ns
-
-
-
- mJ
-
-
IFAG IPC TD VLS
3
Rev. 2.5 30.04.2015