CFY25-20.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 CFY25-20 데이타시트 다운로드

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GaAs FET
q Low noise
q High gain
q For front-end amplifiers
q lon-implanted planar structure
q All gold metallization
CFY 25
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1 2 34
CFY 25-17
CFY 25-20
CFY 25-23
C5
C6
C7
Q62703-F106
Q62703-F107
Q62703-F108
D SGS
Package1)
Micro-X
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Total power dissipation, TS 56 ˚C2)
Channel temperature
Storage temperature range
Thermal Resistance
Channel - soldering point2)
Symbol
VDS
VDG
VGS
ID
Ptot
Tch
Tstg
Values
Unit
5V
7
–5…+0
80 mA
250 mW
150 ˚C
– 65 … + 150
Rth chS
375
K/W
1) For detailed information see chapter Package Outlines.
2) TS is measured on the source lead at the soldering point to the pcb.
Semiconductor Group
1
07.94

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CFY 25
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Drain-source saturation current
VDS = 3 V, VGS = 0
Pinch-off voltage
ID = 1 mA, VDS = 3 V
Gate leakage current
ID = 15 mA, VDS = 3 V
Transconductance
ID = 15 mA, VDS = 3 V
Noise figure
IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17
CFY 25-20
CFY 25-23
Associated gain
IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17
CFY 25-20
CFY 25-23
Symbol
min.
IDSS 15
Values
typ. max.
30 60
Unit
mA
Vp – 0.3 – 1.0 – 3.0 V
IG – 0.1 2 µA
gm
30 40 –
mS
F dB
– 1.6 1.7
– 1.9 2.0
– 2.2 2.3
Ga
9 9.5 –
8.5 9
8.5 9
Semiconductor Group
2

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CFY 25
Total power dissipation Ptot = f (TS; TA*)
* Package mounted on alumina
Output characteristics ID = f (VDS)
Transfer characteristics ID = f (VG)
VDS = 3 V
Semiconductor Group
3

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CFY 25
Common Source Noise Parameters
f
Fmin
Ga
Γopt
GHz dB dB MAG ANG
RN
ID = 15 mA, VDS = 3.0 V, Z0 = 50
2 0.60 18.5 0.70
31 29
4 0.77 14.6 0.59
63 21
6 1.00 12.4 0.50 103 13
8 1.25 11.0 0.47 140 7.3
10 1.55 9.8 0.45
174 5.6
12 1.77 9.0 0.43 – 156 7.1
14 2.15 8.1 0.41 – 130 18
rN
N
F50
G(F50 )
– dB dB
0.580
0.420
0.260
0.146
0.112
0.142
0.360
0.10
0.14
0.19
0.23
0.28
0.29
0.46
2.0
1.8
1.8
2.0
2.4
2.5
3.0
11.4
10.5
9.3
8.2
7.3
6.4
5.8
Source impedance for min. noise figure
ID = 15 mA, VDS = 3 V
Circles of constant noise figure
ID = 15 mA, VDS = 3 V, f = 12 GHz
Semiconductor Group
4

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Minimum noise figure Fmin = f (f)
Associated gain Ga = f (f)
ID = 15 mA, VDS = 3 V, ZSopt
CFY 25
Minimum noise figure Fmin = f (ID)
Associated gain Ga = f (ID)
VDS = 3 V, f = 12 GHz, ZSopt
Semiconductor Group
5