CFY27.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 CFY27 데이타시트 다운로드

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HiRel Ku-Band GaAs General Purpose MESFET
CFY27
HiRel Discrete and Microwave Semiconductor
For professional pre- and driver-amplifiers
For frequencies from 500 MHz to 20 GHz
Hermetically sealed microwave package
High gain, medium power
Component Under Development
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5613/008,
Type Variant No.s 06 and 07 foreseen (tbc.)
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY27-38 (ql)
CFY27-P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY27-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62703F121
on request
on request
on request
Semiconductor Group
1 of 9
Draft D, September 99

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Maximum Ratings
CFY27
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse / forward)
Drain current
Gate forward current
RF Input Power, C- and X-Band 1)
Junction temperature
Storage temperature range
Total power dissipation 2)
Soldering temperature 3)
Thermal Resistance
Junction-soldering point
Symbol
VDS
VDG
VGS
ID
IG
PRF,in
TJ
Tstg
Ptot
Tsol
Values
9
11
- 6... + 0.5
420
5
+ 20 (tbc.)
175
- 65... + 175
900
230
Rth JS
150 (tbc.)
Unit
V
V
V
mA
mA
dBm
°C
°C
mW
°C
K/W
Notes.:
1) For VDS 5 V. For VDS > 5 V, derating is required.
2) At TS = + 40 °C. For TS > + 40 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
2 of 9
Draft D, September 99

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Electrical Characteristics (at TA=25°C; unless otherwise specified)
CFY27
Parameter
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
Gate threshold voltage
VDS = 3 V, ID = 1 mA
Drain current at pinch-off
VDS = 3 V, VGS = - 4 V
Gate leakage current at pinch-off
VDS = 3 V, VGS = - 4 V
Transconductance
VDS = 3 V, ID = 120 mA
Gate leakage current at operation
VDS = 3 V, ID = 120 mA
Thermal resistance
junction to soldering point
Symbol
min.
Values
Unit
typ. max.
IDss
-VGth
IDp
150 270 420 mA
1.0 2.0
3.2 V
-
< 12 60
µA
-IGp -
< 12 30
µA
gm120
130 160 -
mS
-IG120
-
<3 -
µA
Rth JS
-
125 -
K/W
Semiconductor Group
3 of 9
Draft D, September 99

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Electrical Characteristics (continued)
CFY27
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Noise figure 1)
VDS = 3 V, ID = 120 mA, f = 12 GHz
CFY27-P
NF dB
- < 3.6 -
CFY27-38
- 3.5 3.8
Associated gain. 1)
VDS = 3 V, ID = 120 mA, f = 12 GHz
Ga
dB
CFY27-P
- > 7.8 -
CFY27-38
7.5 8.0
-
Output power at 1 dB gain compression 2) P1dB
VDS = 5 V, ID(RF off) = 120 mA, f = 2.3 GHz
CFY27-P
24.5 26
-
dBm
CFY27-38
- > 25 -
Linear power gain 2)
VDS = 5 V, ID = 120 mA, f = 2.3 GHz,
Pin = 0 dBm
CFY27-P
Glp
17.5 19
-
dB
CFY27-38
- > 18 -
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power / linear power gain characteristics given for optimum output power matching
conditions (fixed generic matching, no fine-tuning).
Semiconductor Group
4 of 9
Draft D, September 99

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Typical Common Source S-Parameters CFY27
CFY27
f
[GHz]
0,5
0,6
0,7
0,8
0,9
1,0
1,1
1,2
1,3
1,4
1,5
1,6
1,7
1,8
1,9
2,0
2,1
2,2
2,3
2,4
2,5
2,6
2,7
2,8
2,9
3,0
3,1
3,2
3,3
3,4
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
|S11|
[magn]
0,936
0,921
0,904
0,890
0,876
0,864
0,854
0,846
0,837
0,830
0,823
0,816
0,810
0,804
0,799
0,795
0,791
0,788
0,784
0,781
0,779
0,776
0,773
0,771
0,769
0,767
0,765
0,764
0,763
0,762
0,761
0,758
0,757
0,759
0,761
0,763
0,764
0,766
0,768
0,771
0,775
0,780
0,787
0,794
0,802
0,810
0,816
0,823
0,829
0,835
0,841
0,846
0,851
0,857
0,863
0,869
0,874
0,881
0,887
0,895
<S11
[angle]
-43
-50
-55
-62
-68
-74
-80
-86
-91
-96
-101
-106
-110
-114
-118
-122
-126
-130
-133
-136
-139
-142
-145
-148
-150
-153
-155
-157
-160
-162
-164
-174
177
169
161
154
147
140
133
126
119
111
104
97
90
83
77
70
63
56
49
41
34
27
20
12
5
-1
-7
-12
|S21|
[magn]
8,720
8,470
8,200
7,943
7,698
7,449
7,198
6,948
6,702
6,465
6,240
5,990
5,805
5,603
5,410
5,225
5,030
4,877
4,718
4,569
4,429
4,296
4,170
4,047
3,936
3,829
3,729
3,633
3,539
3,450
3,367
3,014
2,713
2,513
2,310
2,133
1,983
1,856
1,747
1,649
1,561
1,478
1,401
1,329
1,262
1,198
1,138
1,081
1,026
0,974
0,925
0,881
0,839
0,793
0,748
0,702
0,652
0,602
0,555
0,514
VDS = 3 V, ID = 120 mA, Zo = 50
<S21 |S12| <S12 |S22|
[angle]
153
148
143
138
135
130
126
122
119
115
112
109
106
103
100
97
94
92
89
87
84
82
80
78
76
74
72
70
68
66
64
54
46
38
30
22
15
8
0
-8
-16
-23
-31
-39
-47
-55
-62
-70
-78
-86
-94
-102
-110
-119
-127
-137
-147
-157
-166
-176
[magn]
0,0203
0,0245
0,0280
0,0311
0,0333
0,0357
0,0383
0,0407
0,0419
0,0435
0,0448
0,0461
0,0475
0,0486
0,0494
0,0502
0,0508
0,0513
0,0519
0,0524
0,0528
0,0532
0,0537
0,0540
0,0543
0,0545
0,0547
0,0550
0,0554
0,0556
0,0559
0,0574
0,0594
0,0620
0,0644
0,0676
0,0709
0,0751
0,0801
0,0849
0,0891
0,0937
0,0981
0,1022
0,1057
0,1083
0,1106
0,1126
0,1138
0,1144
0,1137
0,1128
0,1110
0,1084
0,1047
0,0997
0,0943
0,0892
0,0845
0,0805
[angle]
68
65
61
57
54
51
49
46
44
43
41
39
38
36
34
33
32
31
30
29
28
27
26
25
25
24
24
23
23
22
22
21
20
20
19
18
17
15
14
11
8
5
2
-2
-7
-11
-16
-20
-26
-31
-37
-42
-48
-54
-60
-67
-73
-78
-83
-87
[magn]
0,149
0,151
0,153
0,156
0,161
0,164
0,169
0,173
0,179
0,186
0,190
0,194
0,199
0,203
0,208
0,212
0,216
0,219
0,222
0,225
0,227
0,229
0,232
0,235
0,237
0,240
0,242
0,244
0,246
0,249
0,251
0,266
0,283
0,300
0,316
0,332
0,349
0,366
0,381
0,398
0,414
0,431
0,450
0,469
0,488
0,505
0,525
0,547
0,566
0,584
0,601
0,616
0,631
0,648
0,666
0,688
0,713
0,741
0,772
0,805
<S22
[angle]
-55
-64
-72
-81
-87
-94
-100
-105
-110
-114
-118
-122
-125
-128
-131
-134
-137
-139
-142
-144
-147
-149
-150
-152
-154
-155
-157
-159
-160
-162
-164
-171
-178
177
171
166
160
154
149
142
137
131
125
119
112
106
99
93
86
80
73
67
59
52
44
36
27
20
13
6
k-Fact.
[magn]
0,33
0,35
0,38
0,41
0,43
0,46
0,47
0,48
0,51
0,52
0,54
0,57
0,58
0,61
0,63
0,65
0,68
0,70
0,73
0,75
0,78
0,80
0,83
0,85
0,88
0,91
0,93
0,96
0,98
1,01
1,03
1,13
1,21
1,25
1,30
1,32
1,35
1,35
1,33
1,32
1,30
1,28
1,24
1,21
1,18
1,16
1,14
1,13
1,11
1,10
1,10
1,10
1,11
1,12
1,13
1,14
1,17
1,16
1,12
1,04
S21/S12
[dB]
26,3
25,4
24,7
24,1
23,6
23,2
22,7
22,3
22,0
21,7
21,4
21,1
20,9
20,6
20,4
20,2
20,0
19,8
19,6
19,4
19,2
19,1
18,9
18,7
18,6
18,5
18,3
18,2
18,1
17,9
17,8
17,2
16,6
16,1
15,5
15,0
14,5
13,9
13,4
12,9
12,4
12,0
11,5
11,1
10,8
10,4
10,1
9,8
9,5
9,3
9,1
8,9
8,8
8,6
8,5
8,5
8,4
8,3
8,2
8,1
MAG
[dB]
17,5
16,8
15,0
13,8
13,1
12,3
11,6
10,9
10,4
9,9
9,5
9,1
8,8
8,6
8,4
8,2
8,0
7,8
7,7
7,5
7,4
7,2
7,0
6,8
6,6
6,4
6,2
5,9
5,9
6,1
6,9
Semiconductor Group
5 of 9
Draft D, September 99