CFY66.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 CFY66 데이타시트 다운로드

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CFY66
HiRel K-Band GaAs Super Low Noise HEMT
HiRel Discrete and Microwave Semiconductor
Conventional AlGaAs/GaAs HEMT
(For new design we recommend to use our
pseudo-morphic HEMT CFY67)
For professional super low-noise amplifiers
For frequencies from 500 MHz to > 20 GHz
Hermetically sealed microwave package
Super low noise figure, high associated gain
Space Qualified
ESA/SCC Detail Spec. No.: 5613/002,
Type Variant No.s 01 to 04
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY66-08 (ql)
CFY66-08P (ql)
CFY66-10 (ql)
CFY66-10P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY66-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
on request
on request
on request
on request
Semiconductor Group
1 of 8
Draft D, September 99

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Maximum Ratings
CFY66
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse / forward)
Drain current
Gate forward current
RF Input Power, C- and X-Band 1)
Junction temperature
Storage temperature range
Total power dissipation 2)
Soldering temperature 3)
Thermal Resistance
Junction-soldering point
Symbol
VDS
VDG
VGS
ID
IG
PRF,in
TJ
Tstg
Ptot
Tsol
Values
3.5
4.5
- 3... + 0.5
60
2
+ 10
150
- 65... + 150
200
230
Rth JS
515 (tbc.)
Unit
V
V
V
mA
mA
dBm
°C
°C
mW
°C
K/W
Notes.:
1) For VDS 2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
2 of 8
Draft D, September 99

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CFY66
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
Gate threshold voltage
VDS = 2 V, ID = 1 mA
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V
Transconductance
VDS = 2 V, ID = 10 mA
Gate leakage current at operation
VDS = 2 V, ID = 10 mA
Thermal resistance
junction to soldering point
Symbol
min.
Values
Unit
typ. max.
IDss
-VGth
IDp
10 30 60 mA
0.2 0.7
2.0 V
-
< 50 -
µA
-IGp -
< 50 200 µA
gm10
40 55
-
mS
-IG10
-
< 0.5 2
µA
Rth JS
-
450 -
K/W
Semiconductor Group
3 of 8
Draft D, September 99

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Electrical Characteristics (continued)
CFY66
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Noise figure 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz
CFY66-08, -08P
NF dB
- 0.7 0.8
CFY66-10, 10P
- 0.9 1.0
Associated gain. 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz
CFY66-08, -08P
Ga dB
10.0 11.0 -
CFY66-10, 10P
9.5 10.5 -
Output power at 1 dB gain compression 2) P1dB
VDS = 2 V, ID = 20 mA, f = 12 GHz
CFY66-06, -08, -10
-
11.0 -
dBm
CFY66-08P, -10P
10.0 11.0 -
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group
4 of 8
Draft D, September 99

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CFY66
Typical Common Source S-Parameters
f
[GHz]
1,0
2,0
3,0
4,0
5,0
6,0
7,0
8,0
9,0
10,0
11,0
12,0
13,0
14,0
15,0
16,0
17,0
18,0
CFY66-08: VDS = 2 V, ID = 10 mA, Zo = 50
|S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12
[magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB]
0,990 -21 4,451 161 0,0260 70 0,649 -16 0,14 22,3
0,960 -39 4,282 144 0,0460 61 0,623 -29 0,19 19,7
0,920 -57 4,148 126 0,0650 49 0,589 -43 0,27 18,0
0,880 -77 3,979 108 0,0830 37 0,560 -57 0,32 16,8
0,830 -95 3,727 93 0,0940 25 0,532 -70 0,39 16,0
0,790 -111 3,444 78 0,1000 14 0,506 -83 0,47 15,4
0,749 -124 3,206 64 0,1060 6 0,490 -94 0,55 14,8
0,720 -137 3,029 50 0,1110 -3 0,463 -103 0,63 14,4
0,690 -150 2,907 38 0,1130 -11 0,440 -113 0,70 14,1
0,670 -165 2,845 25 0,1190 -20 0,420 -121 0,74 13,8
0,649 179 2,787 11 0,1210 -28 0,400 -130 0,79 13,6
0,628 164 2,699 -3 0,1200 -37 0,385 -143 0,84 13,5
0,610 151 2,614 -16 0,1200 -46 0,370 -153 0,91 13,4
0,597 138 2,584 -28 0,1190 -55 0,355 -162 0,96 13,4
0,584 121 2,550 -42 0,1180 -66 0,340 -172 1,01 13,3
0,580 104 2,484 -56 0,1170 -76 0,330 178 1,05 13,3
0,580 89 2,461 -71 0,1150 -87 0,325 169 1,08 13,3
0,580 74 2,456 -86 0,1160 -100 0,320 160 1,09 13,3
MAG
[dB]
12,8
11,9
11,5
11,4
Typical Common Source Noise-Parameters
CFY66-08: VDS = 2 V, ID = 10 mA, Zo = 50
f
NFmin
|Γopt|
<Γopt
Rn
[GHz]
[dB] [magn] [angle]
[]
1 0,27 0,770 16 17,85
2 0,31 0,720 30 16,55
3 0,35 0,672 43 15,27
4 0,38 0,634 57 13,75
5 0,42 0,604 71 11,99
6 0,46 0,578 85 10,04
7
0,50
0,558
100
8,15
8
0,55
0,541
114
6,30
9
0,60
0,528
128
4,74
10
0,65
0,517
143
3,45
11
0,70
0,506
157
2,58
12
0,74
0,496
171
2,16
13
0,79 0,485 -175
2,27
14
0,85 0,472 -160
2,88
15
0,89 0,457 -146
3,99
16
0,95 0,437 -132
5,59
17
1,00 0,415 -118
7,63
18
1,06 0,389 -102
9,96
Semiconductor Group
5 of 8
Draft D, September 99