CFY67-10P.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 CFY67-10P 데이타시트 다운로드

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CFY67
HiRel K-Band GaAs Super Low Noise HEMT
HiRel Discrete and Microwave Semiconductor
Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
For professional super low-noise amplifiers
For frequencies from 500 MHz to > 20 GHz
Hermetically sealed microwave package
Super low noise figure, high associated gain
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1699
on request
on request
Q62702F1699
Semiconductor Group
1 of 10
Draft D, September 99

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Maximum Ratings
CFY67
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse / forward)
Drain current
Gate forward current
RF Input Power, C- and X-Band 1)
Junction temperature
Storage temperature range
Total power dissipation 2)
Soldering temperature 3)
Thermal Resistance
Junction-soldering point
Symbol
VDS
VDG
VGS
ID
IG
PRF,in
TJ
Tstg
Ptot
Tsol
Values
3.5
4.5
- 3... + 0.5
60
2
+ 10
150
- 65... + 150
200
230
Rth JS
515 (tbc.)
Unit
V
V
V
mA
mA
dBm
°C
°C
mW
°C
K/W
Notes.:
1) For VDS 2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
2 of 10
Draft D, September 99

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CFY67
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
Gate threshold voltage
VDS = 2 V, ID = 1 mA
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V
Transconductance
VDS = 2 V, ID = 15 mA
Gate leakage current at operation
VDS = 2 V, ID = 15 mA
Thermal resistance
junction to soldering point
Symbol
min.
Values
Unit
typ. max.
IDss
-VGth
IDp
15 30 60 mA
0.2 0.7
2.0 V
-
< 50 -
µA
-IGp -
< 50 200 µA
gm15
50 65
-
mS
-IG15
-
< 0.5 2
µA
Rth JS
-
450 -
K/W
Semiconductor Group
3 of 10
Draft D, September 99

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Electrical Characteristics (continued)
CFY67
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Noise figure 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06
NF dB
- 0.5 0.6
CFY67-08, -08P
- 0.7 0.8
CFY67-10, 10P
- 0.9 1.0
Associated gain. 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06
Ga dB
11.5 12.5 -
CFY67-08, -08P
11.0 11.5 -
CFY67-10, 10P
10.5 11.0 -
Output power at 1 dB gain compression 2) P1dB
VDS = 2 V, ID = 20 mA, f = 12 GHz
CFY67-06, -08, -10
-
11.0 -
dBm
CFY67-08P, -10P
10.0 11.0 -
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group
4 of 10
Draft D, September 99

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CFY67
Typical Common Source S-Parameters
f
[GHz]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50
|S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12
[magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB]
0,963 -15 5,315 165 0,0111 74 0,655 -14 0,40 26,8
0,938 -23 5,182 159 0,0225 68 0,639 -18 0,39 23,6
0,913 -33 5,060 150 0,0317 62 0,625 -23 0,42 22,0
0,889 -42 4,940 142 0,0411 57 0,611 -28 0,43 20,8
0,865 -52 4,824 133 0,0509 53 0,596 -35 0,43 19,8
0,844 -62 4,715 124 0,0585 46 0,582 -41 0,45 19,1
0,823 -72 4,591 115 0,0650 41 0,567 -47 0,47 18,5
0,800 -81 4,450 107 0,0714 36 0,552 -53 0,50 17,9
0,779 -91 4,319 99 0,0768 31 0,534 -60 0,52 17,5
0,761 -100 4,183 91 0,0811 25 0,520 -66 0,54 17,1
0,743 -109 4,043 83 0,0850 20 0,500 -72 0,58 16,8
0,725 -117 3,906 75 0,0885 15 0,490 -77 0,60 16,4
0,708 -125 3,769 68 0,0917 11 0,477 -83 0,63 16,1
0,690 -132 3,640 61 0,0942 7 0,467 -88 0,67 15,9
0,673 -139 3,529 54 0,0962 3 0,455 -93 0,71 15,6
0,656 -146 3,427 48 0,0978 -1 0,442 -97 0,76 15,4
0,640 -153 3,344 41 0,0998 -5 0,430 -101 0,79 15,3
0,625 -160 3,271 34 0,1010 -9 0,417 -104 0,84 15,1
0,611 -168 3,202 28 0,1027 -12 0,406 -108 0,87 14,9
0,597 -175 3,143 21 0,1033 -16 0,393 -113 0,91 14,8
0,586 177 3,089 15 0,1044 -20 0,381 -118 0,94 14,7
0,576 169 3,041 8 0,1056 -24 0,370 -123 0,96 14,6
0,564 161 3,002 1 0,1068 -28 0,358 -129 0,98 14,5
0,554 154 2,960 -5 0,1070 -32 0,351 -134 1,01 14,4
0,547 146 2,923 -12 0,1076 -36 0,343 -140 1,03 14,3
0,536 139 2,886 -19 0,1076 -41 0,336 -146 1,06 14,3
0,529 131 2,848 -26 0,1081 -45 0,330 -151 1,09 14,2
0,522 124 2,815 -33 0,1087 -50 0,325 -156 1,11 14,1
0,517 116 2,787 -40 0,1087 -55 0,320 -161 1,13 14,1
0,510 108 2,765 -46 0,1093 -60 0,315 -167 1,14 14,0
0,505 99 2,751 -54 0,1090 -65 0,311 -172 1,16 14,0
0,502 91 2,735 -61 0,1090 -71 0,305 -177 1,18 14,0
0,499 82 2,719 -68 0,1091 -77 0,301 177 1,19 14,0
0,498 74 2,722 -75 0,1097 -82 0,297 172 1,19 13,9
0,498 68 2,741 -80 0,1103 -87 0,294 168 1,18 14,0
0,498 62 2,760 -84 0,1107 -90 0,290 165 1,17 14,0
MAG
[dB]
13,8
13,3
12,7
12,4
12,1
11,9
11,7
11,6
11,4
11,3
11,3
11,4
11,5
Semiconductor Group
5 of 10
Draft D, September 99