2016.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2016 데이타시트 다운로드

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
2016
N-Channel Enhancement Mode Field Effect Transistor
General Description
The 2016 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
4.2
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=4.2A
VGS=2.5V, ID=3.7A
Min Typ Max Units
20 V
1 µA
100 nA
0.4 0.6
1
V
15 A
41 50 mΩ
52 63 mΩ
gFS Forward Transconductance
VDS=5V, ID=4.2A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=4.2A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=2.7Ω,
RGEN=6Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
8
0.76
436
66
44
3
6.2
1.6
0.5
5.5
6.3
40
12.7
12.3
3.5
S
1.2 V
2A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev4 : June 2005

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
8V
12
8
4.5V
3V
2.5V
10
8
2V
6
4
4
VGS=1.5V
2
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
0
0
VDS=5V
125°C
25°C
0.5 1 1.5 2
VGS(Volts)
Figure 2: Transfer Characteristics
2.5
100
80 VGS=1.8V
60 VGS=2.5V
40 VGS=4.5V
1.8
1.6
1.4 ID=4.2A
1.2
VGS=2.5
VGS=1.8V
VGS=4.5V
1
20
0 4 8 12
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
100
90
80 ID=4.2A
70
60 125°C
50
40 25°C
30
20
02468
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E+01
1E+00
1E-01
125°C
1E-02
1E-03
25°C
1E-04
1E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0