2021.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 2021 데이타시트 다운로드

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
N-Channel, 20V, 0.89A, Small Signal MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.310@ VGS=4.5V
0.360@ VGS=2.5V
0.460@ VGS=1.8V
Descriptions
The 2021 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product 2021 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-323
Applications
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
SOT-323
D
3
12
GS
Pin configuration (Top view)

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA =25°C
Symbol
VDS
VGS
ID
10 S
Steady State
20
±6
0.58 0.55
Unit
V
A
Maximum Power Dissipation
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
TA =25°C
PD
IDM
TJ
TL
Tstg
0.37 0.31
1.4
150
260
-55 to 150
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
275
325
375
445
260
Maximum
335
395
430
535
300
Unit
°C/W

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS =±5V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 0.55A
Drain-to-source On-resistance
RDS(on)
VGS = 2.5V, ID = 0.45A
VGS = 1.8V, ID = 0.35A
Forward Transconductance
gFS VDS = 5 V, ID = 0.55A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 100 kHz, VDS =
10 V
VGS = 4.5 V, VDS = 10 V,
ID = 0.55A
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VDD=10V, VGS=4.5V,
ID=0.55A, RG=6Ω
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 0.35A
Min
20
0.45
0.5
Typ Max Unit
V
1 uA
5 uA
0.58 0.85 V
220 310
260 360 mŸ
320 460
2.0 S
50
13 pF
8
1.15
0.06
0.15
nC
0.23
22
80
ns
700
380
0.7 1.5 V

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Typical Characteristics (Ta=25oC, unless otherwise noted)
4 2.0
VGS= 2.5V ~5.0V
V =5V
DS
1.6
3 VGS=2.0V
1.2
2
VGS=1.5V
0.8
1
0.4
T=-50oC
T=25oC
T=125oC
0
0.0
400
0.4 0.8 1.2 1.6
VDS-Drain-to-Source Voltage(V)
Output characteristics
2.0
350
V =1.8V
GS
300
250
V =2.5V
GS
200
V =4.5V
GS
150
100
0.4
0.8 1.2 1.6
IDS-Drain-to-Source Current(A)
2.0
On-Resistance vs. Drain current
320
VGS=4.5V, ID=0.55A
280
240
200
160
120
-50 -25
0 25 50 75 100 125 150
Temperature(oC)
On-Resistance vs. Junction temperature
0.0
0.0
1600
0.4 0.8 1.2 1.6
VGS-Gate-to-Source Voltage(V)
Transfer characteristics
2.0
1200
800
400
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS-Gate-to-Source Voltage(V)
On-Resistance vs. Gate-to-Source voltage
0.8
I =250uA
D
0.7
0.6
0.5
0.4
0.3
0.2
-50 -25
0 25 50 75 100 125 150
Temperature (oC)
Threshold voltage vs. Temperature

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
60 0.8
V =0V
GS
50 F=100kHz
0.6
40
Ciss
30
Coss
Crss
0.4
T=150oC
T=25oC
20
10 0.2
0
0 2 4 6 8 10
V Drain-to-Source Voltage (V)
DS
Capacitance
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V -Source-to-Drain Voltage(V)
SD
Body diode forward voltage
10
1
0.1 Limited by RDS(on)
0.01
10 ms
100 ms
1s
10 s
DC
0.001
TA = 25 °C
Single Pulse
0.1 1 10
VDS - Drain-to-Source Voltage (V)
100
Safe operating power
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 325 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
100 600
Transient thermal response (Junction-to-Ambient)