2021.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 2021 데이타시트 다운로드

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
N-Channel, 20V, 0.89A, Small Signal MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.310@ VGS=4.5V
0.360@ VGS=2.5V
0.460@ VGS=1.8V
Descriptions
The 2021 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product 2021 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-323
Applications
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
SOT-323
D
3
12
GS
Pin configuration (Top view)

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA =25°C
Symbol
VDS
VGS
ID
10 S
Steady State
20
±6
0.58 0.55
Unit
V
A
Maximum Power Dissipation
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
TA =25°C
PD
IDM
TJ
TL
Tstg
0.37 0.31
1.4
150
260
-55 to 150
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
275
325
375
445
260
Maximum
335
395
430
535
300
Unit
°C/W

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS =±5V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 0.55A
Drain-to-source On-resistance
RDS(on)
VGS = 2.5V, ID = 0.45A
VGS = 1.8V, ID = 0.35A
Forward Transconductance
gFS VDS = 5 V, ID = 0.55A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 100 kHz, VDS =
10 V
VGS = 4.5 V, VDS = 10 V,
ID = 0.55A
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VDD=10V, VGS=4.5V,
ID=0.55A, RG=6Ω
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 0.35A
Min
20
0.45
0.5
Typ Max Unit
V
1 uA
5 uA
0.58 0.85 V
220 310
260 360 mŸ
320 460
2.0 S
50
13 pF
8
1.15
0.06
0.15
nC
0.23
22
80
ns
700
380
0.7 1.5 V