2026.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2026 데이타시트 다운로드

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2026
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.056 at VGS = - 4.5 V
- 20 0.069 at VGS = - 2.5 V
0.086 at VGS = - 1.8 V
ID (A)
- 3.2
- 2.8
- 2.3
TO-236
(SOT-23)
G1
S2
3D
Top View
2026
*Marking Code:262TF
FEATURES
Power MOSFETs: 1.8 V Rated
Pb-free
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25 °C
IDM
IS
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 20
± 12
- 3.2
-12
- 1.6
1.25
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 Board.
b. t 5 sec.
t 5 sec
Steady State
Symbol
RthJA
Typical
130
Maximum
100
Unit
°C/W
1

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2026
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = - 10 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = - 16 V, VGS = 0 V
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VDS - 5 V, VGS = - 2.5 V
VGS = - 4.5 V, ID = - 3.2A
Drain-Source On-Resistancea
rDS(on)
VGS = - 2.5 V, ID = - 2.8A
Forward Transconductancea
gfs
VGS = - 1.8 V, ID = - 2.3A
VDS = - 5 V, ID = - 3.2 A
Diode Forward Voltage
VSD IS = - 1.6 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 4 V, VGS = - 4.5 V, ID - 3.5 A
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Switchingb
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = - 4 V, RL = 4 Ω
ID - 1.0 A, VGEN = - 4.5 V, RG = 6 Ω
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 300 µs, duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
Min
- 20
- 0.6
-6
-3
Limits
Typ
Max
-1
± 100
- 50
0.056
0.069
0. 086
8.5
- 1.28
Unit
V
nA
nA
A
Ω
S
V
10
2
2
1245
375
210
15
nC
pF
13 20
25 40
ns
55 80
19 35
2

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2026
TYPICAL CHARACTERISTICS 25 °C, unless noted
12
VGS = 4.5 thru 2.5 V
2V
10
8
6
4 1.5 V
12
10
8
6
4
TC = - 55 °C
25 °C
125 °C
2
1, 0.5 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.30
2
0
0
2000
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.5
0.25
0.20
0.15
0.10
VGS = 1.8 V
VGS = 2.5 V
0.05
VGS = 4.5 V
0
0 2 4 6 8 10
ID - Drain Current (A)
On-Resistance vs. Drain Current
12
5
VDS = 4 V
4 ID = 3.5 A
3
2
1600
1200
Ciss
800
Coss
400
Crss
0
0246
VDS - Drain-to-Source Voltage (V)
Capacitance
1.4
VGS = 4.5 V
ID = 3.5 A
1.2
8
1.0
0.8
1
0
0 2 4 6 8 10
Qg - T otal Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3