70N03.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 70N03 데이타시트 다운로드

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
70N03
30 V
8.0 m
70 A
TO-251
3
2
1
Type
70N03
Package
TO-251
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=70 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
70
280
57
70
±20
68
-55 ... +175
55/175/56
A
mJ
A
V
W
°C
1

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
70N03
min.
Values
typ.
Unit
max.
- - 2.2 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 250uA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1.0
3.0
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
±100 nA
Gate-source leakage current
Drain-source on-state resistance
I GSS
V GS=±20 VV, DS=0 V
R DS(on)
V GS=4.5 V, I D=20A
V GS=10 V, I D=40A
-
-
-
±100 nA
13
m
8
2

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
70N03
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=70 A, R G=3.5
-
-
-
-
-
-
-
2500
640
35
7
5
27
5
3300 pF
830
70
- ns
-
-
-
Q gs - 8 10 nC
Q gd V DD=24 V, I D=70 A,
Q g V GS=0 to 10 V
-
-
5 10
37 48
V plateau
- 3.2 - V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=35 A,
T j=25 °C
t rr
V R=15 V, I F=I S,
di F/dt =100 A/µs
- - 80 A
- - 280
0.6 0.95 1.3 V
- 40 - ns
Reverse recovery charge2)
Q rr
- 35 - nC
1) Current is limited by bondwire; with an R thJC = 2.2K/W the chip is able to carry 100A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3