70N03.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 70N03 데이타시트 다운로드

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N-Channel Enhancement Mode Power MOSFET
AF70N03
„ Features
-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-RoHS Compliant
-Pb Free Plating Product
„ Product Summary
„ General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
BVDSS (V)
30
RDS(ON) (m)
9
ID (A)
60
„ Pin Assignments
„ Pin Descriptions
(Front View)
3S
2D
1G
Pin Name
S
G
D
Description
Source
Gate
Drain
„ Ordering information
A X 70N03 X X
Feature
PN Package
F :MOSFET
D: TO-252
„ Block Diagram
Packing
Blank : Tube or Bulk
A : Tape & Reel
DS
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/5

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N-Channel Enhancement Mode Power MOSFET
AF70N03
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current, VGS=10V
IDM
PD
TSTG
TJ
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TA=25ºC
TA=100ºC
TA=25ºC
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
2.8
110
Units
ºC/W
ºC/W
„ Electrical Characteristics (TJ=25ºC unless otherwise noted)
Symbol
Parameter
BVDSS
BVDSS/TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(TJ=25ºC)
Drain-Source Leakage
Current(TJ=175ºC)
Gate Source Leakage
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS=0V, ID=250uA
Reference to 25ºC,
ID=1mA
VGS=10V, ID=33A
VGS=4.5V, ID=20A
VDS= VGS, ID=250uA
VDS=10V, ID=33A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=33A
VDS=20V
VGS=4.5V
VDS=15V
ID=33A
RG=3.3, VGS=10V
RD=0.45
VGS=0V
VDS=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.032
-
-
-
35
-
-
-
16.5
5
10.3
8.2
105
21.4
8.5
1485
245
170
Max.
-
-
9
18
3
-
1
250
±100
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ºC
m
V
S
uA
nA
nC
nS
pF
„ Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current (Body
Diode)
ISM
Pulsed Source Current (Body Diode)
(Note 1)
VSD Forward On Voltage (Note 2)
Test Conditions
VD=VG=0V, VS=1.3V
TJ=25ºC, IS=60A,
VGS=0V
Min.
-
-
-
Typ.
-
-
-
Max.
60
195
1.3
Unit
A
A
V
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
2/5

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N-Channel Enhancement Mode Power MOSFET
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
„ Typical Performance Characteristics
AF70N03
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
3/5