70N03.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 70N03 데이타시트 다운로드

No Preview Available !

N-Channel Enhancement Mode Power MOSFET
AF70N03
„ Features
-Low Gate Charge
-Simple Drive Requirement
-Fast Switching
-RoHS Compliant
-Pb Free Plating Product
„ Product Summary
„ General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
BVDSS (V)
30
RDS(ON) (m)
9
ID (A)
60
„ Pin Assignments
„ Pin Descriptions
(Front View)
3S
2D
1G
Pin Name
S
G
D
Description
Source
Gate
Drain
„ Ordering information
A X 70N03 X X
Feature
PN Package
F :MOSFET
D: TO-252
„ Block Diagram
Packing
Blank : Tube or Bulk
A : Tape & Reel
DS
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/5

No Preview Available !

N-Channel Enhancement Mode Power MOSFET
AF70N03
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current, VGS=10V
IDM
PD
TSTG
TJ
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TA=25ºC
TA=100ºC
TA=25ºC
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
2.8
110
Units
ºC/W
ºC/W
„ Electrical Characteristics (TJ=25ºC unless otherwise noted)
Symbol
Parameter
BVDSS
BVDSS/TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(TJ=25ºC)
Drain-Source Leakage
Current(TJ=175ºC)
Gate Source Leakage
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS=0V, ID=250uA
Reference to 25ºC,
ID=1mA
VGS=10V, ID=33A
VGS=4.5V, ID=20A
VDS= VGS, ID=250uA
VDS=10V, ID=33A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=33A
VDS=20V
VGS=4.5V
VDS=15V
ID=33A
RG=3.3, VGS=10V
RD=0.45
VGS=0V
VDS=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.032
-
-
-
35
-
-
-
16.5
5
10.3
8.2
105
21.4
8.5
1485
245
170
Max.
-
-
9
18
3
-
1
250
±100
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ºC
m
V
S
uA
nA
nC
nS
pF
„ Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current (Body
Diode)
ISM
Pulsed Source Current (Body Diode)
(Note 1)
VSD Forward On Voltage (Note 2)
Test Conditions
VD=VG=0V, VS=1.3V
TJ=25ºC, IS=60A,
VGS=0V
Min.
-
-
-
Typ.
-
-
-
Max.
60
195
1.3
Unit
A
A
V
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
2/5

No Preview Available !

N-Channel Enhancement Mode Power MOSFET
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
„ Typical Performance Characteristics
AF70N03
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
3/5

No Preview Available !

N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
AF70N03
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
4/5

No Preview Available !

N-Channel Enhancement Mode Power MOSFET
AF70N03
„ Marking Information
TO-252
Logo
Part Number
„ Package Information
Package Type: TO-252
( Top View)
70N03
YYWWX
YY : Year
WW: Nth week
X : Internal code ( Optional)
D
D1
Anachip Corp.
www.anachip.com.tw
B1
e
e
R: 0.127~0.381
(0.1mm)
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A2
A3
B1
D
D1
F
F1
E1
E2
E3
e
C
Dimensions In Millimeters
Min.
Nom.
Max.
1.80
2.30
2.80
0.40
0.50
0.60
0.40
0.70
1.00
6.00
6.50
7.00
4.80
5.35
5.90
2.20
2.63
3.05
0.50
0.85
1.20
5.10
5.70
6.30
0.50
1.10
1.70
3.50
4.00
4.50
- 2.30 -
0.35
0.50
0.65
Rev. 1.0 Aug 10, 2005
5/5