90N03.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 90N03 데이타시트 다운로드

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
90N03
30 V
6.0 m
80 A
TO-251
3
2
1
Type
90N03L
Package
TO-251
Marking
90N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
Unit
80
320
240
80
±20
95
-55 ... +175
55/175/56
A
mJ
A
V
w
°C
1

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
90N03
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.1 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250uA
1.0
1.5
Zero gate voltage drain current
I DSS
V DS=24 V, V GS=0 V,
T j=25 °C
50 nA
Gate-source leakage current
Drain-source on-state resistance
I GSS
R DS(on)
V GS=±20V V DS=0 V
V GS=4.5 V, ID=20 A
V GS=10 V, I D=40 A
± 100 nA
10.0 m
6.0
2

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
Conditions
90N03
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=80 A, R G=3.5
-
-
-
-
-
-
-
7500
1900
100
14
9
62
13
9750 pF
2500
200
- ns
-
-
-
Q gs - 22 30 nC
Q gd V DD=24 V, I D=80 A,
-
14 28
Q g V GS=0 to 10 V
- 110 140
V plateau
- 3.1 - V
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
t rr
V R=15 V, I F=I S,
di F/dt =100 A/µs
- - 80 A
- - 360
0.6 0.9 1.3 V
- 120 - ns
Reverse recovery charge2)
Q rr
- 100 - nC
1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry 200A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3