HM5N60F.pdf 데이터시트 (총 11 페이지) - 파일 다운로드 HM5N60F 데이타시트 다운로드

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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
HM5N60
主要参数 MAIN CHARACTERISTICS
封装 Package
ID .0 A
VDSS 600 V
Rdson(@Vgs=10V) 2.4Ω
Qg 13.3nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
zCrss (典型值 9pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 9pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
印记
封装
Order codes Marking Package
HMN60I HMN60I IPAK
HM N60K HMN60K DPAK
HMN60
HMN60 TO-220C
HM N60F HMN60F TO-220MF
无卤素
Halogen Free
NO
NO
NO
NO
包装
Packaging
Tube
Tube
Tube
Tube
器件重量
Device Weight
0.35 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
1/11

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绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
HM5N60
项目
Parameter
符号
Symbol
HM5N60I/K
数值
Value
HM5N60
HM5N60F
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
最大脉冲漏极电流(注 1
Drain Current - pulse
note 1
IDM
最高栅源电压
Gate-Source Voltage
VGSS
单脉冲雪崩能量(注 2
Single Pulsed Avalanche
Energy
EAS
note 2
雪崩电流(注 1
Avalanche Current
note 1
IAR
重复雪崩能量(注 1
Repetitive Avalanche Current
note 1
EAR
二极管反向恢复最大电压变化
速率(注 3
Peak Diode Recovery
dv/dt
dv/dt note 3
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
51
0.39
25
最高结温及存储温度
Operating and Storage
Temperature Range
TJTSTG
引线最高焊接温度
Maximum Lead Temperature
for Soldering Purposes
TL
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
600
5.0
2.5
16
±30
240
5.0
10.0
5.5
100
0.80
-55+150
300
5.0*
2.5*
16*
33
0.26
Uni
t
V
A
A
A
V
mJ
A
mJ
V/n
s
W
W/
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
2/11

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电特性 ELECTRICAL CHARACTERISTICS
HM5N60
项目
符号
测试条件
最小 典型最大单 位
Parameter
Symbol
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS ID=250μA, VGS=0V
600 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA,
TJ 25
referenced
to
-
0.65
-
V/
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=600V,VGS=0V,
TC=25
VDS=480V, TC=125
VDS=0V, VGS =30V
- - 10 μA
- - 100 μA
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON) VGS =10V , ID=2A
- 1.7 2.4
正向跨导
Forward Transconductance
gfs
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
VDS = 40V , ID=2Anote 4- 4.7 -
S
VDS=25V,
VGS =0V,
f=1.0MHZ
- 490 642 pF
- 95 124 pF
反向传输电容
Reverse transfer capacitance
Crss
- 9 12 pF
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
3/11

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电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=300V,ID=5A,RG=25
note 45
延迟时间 Turn-Off delay time
td(off)
下降时间 Turn-Off Fall time
tf
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Qg
Qgs
Qgd
VDS =480V ,
ID=5A
VGS =10V note 45
HM5N60
- 16 42 ns
- 49 111 ns
- 46 102 ns
- 37 84 ns
- 13.3 19 nC
- 3.6 - nC
- 4.9 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 5 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 20 A
正向压降
Drain-Source Diode Forward VSD VGS=0V, IS=5.0A
Voltage
- - 1.4 V
反向恢复时间
Reverse recovery time
反向恢复电荷
Reverse recovery charge
trr VGS=0V, IS=5.0A
Qrr dIF/dt=100A/μs (note 4)
热特性 THERMAL CHARACTERISTIC
- 330 -
- 2.67 -
ns
μC
最大
项目
符号
Max 单位
Parameter
Symbol HM5N60
I/K
Unit
HM5N60 HM5N60F
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.50
1.25
3.79 /W
结到环境的热阻
Thermal Resistance, Junction to Ambient Rth(j-A)
83
62.5 62.5 /W
注释:
1:脉冲宽度由最高结温限制
2L=25mH, IAS=5.0A, VDD=50V, RG=25 ,起始结
TJ=25
3ISD 5.0A,di/dt 200A/μs,VDDBVDSS,起始结温
TJ=25
4:脉冲测试:脉冲宽度300μs,占空比2
5:基本与工作温度无关
Notes:
1Pulse width limited by maximum junction
temperature
2 L=25mH, IAS=5.0A, VDD=50V, RG=25 ,Starting
TJ=25
3 ISD 5.0A,di/dt 200A/μs,VDDBVDSS, Starting
TJ=25
4Pulse TestPulse Width 300μs,Duty Cycle2
5Essentially independent of operating temperature
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
4/11

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
HM5N60
On-Region Characteristics
10 Top
VGS
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
Transfer Characteristics
10
150
1
1 Notes
1. 250μs pulse test
2. TC=25
10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
2.4
25
Notes
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
2.2
2.0 VGS=10V
1.8
1.6
1.4 Note Tj=25
VGS=20V
1.2
0123456
ID [A]
8.0x102
6.0x102
Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
25
1
150
Notes
1. 250μs pulse test
2. VGS=0V
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD [V]
Gate Charge Characteristics
12
VDS=480V
10 VDS=300V
8 VDS=120V
4.0x102
6
2.0x102
4
2
0.0
10-1 100 101
V DS Drain-Source Voltage [V]
0
0 2 4 6 8 10 12 14
Qg Toltal Gate Charge [nC]
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
5/11