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FQP6N80C / FQPF6N80C
N-Channel QFET® MOSFET
800 V, 5.5 A, 2.5
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
5.5 A, 800 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V,
ID = 2.75 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
* Drain current limited by maximum junction temperature.
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP6N80C
FQPF6N80C /
FQPF6N80CT
800
5.5 5.5 *
3.2 3.2 *
22 22 *
± 30
680
5.5
15.8
4.5
158 51
1.27 0.41
-55 to +150
300
FQP6N80C
0.79
0.5
62.5
FQPF6N80C /
FQPF6N80CT
2.45
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

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Package Marking and Ordering Information
Part Number
FQP6N80C
FQPF6N80C
FQPF6N80CT
Top Mark
FQP6N80C
FQPF6N80C
FQPF6N80CT
Package
TO-220
TO-220F
TO-220F
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.97
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.75 A
VDS = 50 V, ID = 2.75 A
3.0 --
-- 2.1
-- 5.4
5.0
2.5
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1010 1310
-- 90 115
-- 8
11
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 5.5 A,
RG = 25
(Note 4)
--
--
--
--
26 60
65 140
47 105
44 90
ns
ns
ns
ns
VDS = 640 V, ID = 5.5 A,
-- 21 30 nC
VGS = 10 V
-- 6 -- nC
(Note 4) --
9
-- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 42 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 5.5 A, di/dt 200 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- -- 5.5
-- --
22
-- -- 1.4
-- 615
--
-- 5.4
--
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
2
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

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 !    
Top :
VGS
15.0 V
101 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
VGS = 10V
4
3
VGS = 20V
2
Note : TJ = 25
1
0 3 6 9 12
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1500
1200
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
900
600
300
0
10-1
Coss
Crss
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 50V
2. 250μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 6.0A
0
0 5 10 15 20 25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
3
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com