BUW51.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 BUW51 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW51
DESCRIPTION
·High Current Capability
·Fast Switching Speed
·Low Saturation Voltage and High Gain
APPLICATIONS
·Designed for use in general purpose power amplifier
applications.
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
IB Base Current-Continuous
IBM Base Current-peak
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
VALUE UNIT
300 V
200 V
7V
20 A
28 A
4A
7A
150 W
175
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 /W
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW51
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICER Collector Cutoff Current
ICEV Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 10A; IB= 1A
VCE= VCEV; RBE= 10Ω
VCE= VCEV; RBE= 10Ω;TC=100
VCE= VCEV; VBE= -1.5V
VCE= VCEV; VBE= -1.5V;TC=100
VEB= 5V; IC= 0
0.8 V
0.9 V
1.4 V
0.5
2.5
mA
0.5
2.0
mA
1.0 mA
Switching times; Resistive Load
tr Rise Time
ts Storage Time
tf Fall Time
IC= 14A; IB1= 1.7A; VCC= 160V;
VBB= -5V; RB2= 1.4Ω; tp= 30μs
0.6 μs
1.4 μs
0.3 μs
isc websitewww.iscsemi.cn
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