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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD011N10RJ3
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 1/ 9
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
RDS(ON)@VGS=6V, ID=6A
100V
48A
10.6A
8.4 mΩ(typ)
9.4 mΩ(typ)
Symbol
MTD011N10RJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTD011N10RJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD011N10RJ3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=0.5mH, ID=38 Amps,
VDD=50V
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
(Note 1)
(Note 1)
(Note 4)
(Note 4)
(Note 3)
(Note 5)
(Note 5)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
100
±20
48
34
10.6
8.5
192
48
361
60
30
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C/W
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC 2.5
Thermal Resistance, Junction-to-ambient, max (Note2)
Thermal Resistance, Junction-to-ambient, max (Note4)
RθJA
50 °C/W
110
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
5. 100% tested by condition of VDD=50V, ID=20A, L=0.5mH, VGS=10V.
MTD011N10RJ3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
100
-
1.2
-
-
-
-
-
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
-
74
-
25.4
-
-
-
8.4
9.4
71.8
10.5
12.7
20
19.2
74
10.8
3656
286
25
-
-
0.84
34
54
-
-
2.6
-
±100
1
5
11
13
-
-
-
-
-
-
-
-
-
-
48
192
1.2
-
-
V
mV/°C
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=10A
VGS=±20V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=55°C
VGS =10V, ID=11A
VGS =6V, ID=6A
nC VDD=50V, ID=11A,VGS=10V
ns
VDD=50V, ID=11A, VGS=10V,
RG=3Ω
pF VGS=0V, VDS=30V, f=1MHz
A
V IS=22A, VGS=0V
ns
nC
VGS=0V, IF=22A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTD011N10RJ3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 4/ 9
Typical Characteristics
80
70
60
50
40
30
20
10
0
0
Typical Output Characteristics
4V
10V, 9V, 8V, 7V, 6V, 5V
3.5V
VGS=2.5V
3V
2468
VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
100
10
VGS=4.5V
6V
10V
1
0.1
1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
ID=11A
400
300
200
100
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0.2
0 2 4 6 8 10 12 14 16 18 20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4 VGS=10V, ID=11A
2
1.6
1.2
0.8
0.4 RDS(ON)@Tj=25°C : 8.4mΩ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTD011N10RJ3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
100
Crss
10
0
5 10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8 VDS=50V
6
1 VDS=15V
4
VDS=80V
0.1
0.01
0.001
1000
Ta=25°C
Pulsed
0.01 0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
2
ID=11A
0
0 10 20 30 40 50 60 70 80
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
60
RDSON
100 Limited
100μs
1ms
10 10ms
100ms
1 TC=25°C, Tj=175°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1s
DC
0.1
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
50
40
30
20
10 Tj(max)=175°C,VGS=10V, RθJC=2.5°C/W
Single Pulse
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTD011N10RJ3
CYStek Product Specification