MTD07N04H8.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 MTD07N04H8 데이타시트 다운로드

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CYStech Electronics Corp.
Spec. No. : C140H8
Issued Date : 2015.04.08
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTD07N04H8
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=11A
Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=9A
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
40V
67A
42.4A
14A
11.2A
4.7mΩ(typ)
8.0mΩ(typ)
Symbol
MTD07N04H8
Outline
Pin 1
DFN5×6
GGate DDrain SSource
Ordering Information
Device
MTD07N04H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTD07N04H8
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C140H8
Issued Date : 2015.04.08
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.5mH, ID=20Amps,
VDD=50V
(Note 2)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Note 2)
TA=70°C
(Note 2)
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
40
±20
67
42.4
14
11.2
200
20
100
5.7
57
36.5
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
2.2
50
Unit
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C.
4. When mounted on1 in² copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad.
.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
*GFS
IGSS
IDSS
40
-
1.5
-
-
-
-
- - V VGS=0V, ID=250μA
0.03 - V/°C Reference to 25°C, ID=250μA
- 2.5 V VDS = VGS, ID=250μA
24 -
S VDS =5V, ID=11A
-
±100
nA VGS=±20V
-
-
1
25
μA
VDS =40V, VGS =0V
VDS =40V, VGS =0V, Tj=125°C
MTD07N04H8
CYStek Product Specification

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*RDS(ON)
-
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
-
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
CYStech Electronics Corp.
Spec. No. : C140H8
Issued Date : 2015.04.08
Revised Date :
Page No. : 3/ 9
4.7
8
6
11
mΩ
VGS =10V, ID=11A
VGS =4.5V, ID=9A
30.2
6.5
7.0
15.6
19.6
49.6
12.4
1514
188
119
1.7
45
-
-
24
30
75
19
1895
235
150
-
nC VDS=20V, ID=16A, VGS=10V
ns VDS=20V, ID=1A, VGS=10V, RG=6Ω
pF VGS=0V, VDS=20V, f=1MHz
Ω f=1MHz
- 67
- 200
0.81 1.1
12 -
6.5 -
A
V IS=10A, VGS=0V
ns
nC
VGS=0, IF=10A, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
MTD07N04H8
unit : mm
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C140H8
Issued Date : 2015.04.08
Revised Date :
Page No. : 4/ 9
Typical Characteristics
200
10V
9V
160 8V
120
Typical Output Characteristics
VGS=7V
VGS=6V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
80
40
0
0
VGS=3.5V
VGS=5V
VGS=4.5V
VGS=4V
2468
VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
100
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
10
VGS=10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
1
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
80 ID=11A
60
40
20
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
3
VGS=10V, ID=11A
2.5
2
1.5
1
0.5 RDS(ON)@Tj=25°C :4.7mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD07N04H8
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C140H8
Issued Date : 2015.04.08
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1000
100
Ciss 1.2
ID=1mA
1
C os
0.8
Crss ID=250μA
0.6
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
1000
100
10
Maximum Safe Operating Area
RDS(ON)
Limit
100μ s
1ms
10ms
100ms
1s
1
TC=25°C, Tj=150°, VGS=10V
RθJC=2.2°C/W, Single Pulse
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
8
6
4
2 VDS=20V
ID=16A
0
0 4 8 12 16 20 24 28 32
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
70
60
50
40
30
20
10 VGS=10V, RθJC=2.2°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTD07N04H8
CYStek Product Specification