MTD07N04I3.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 MTD07N04I3 데이타시트 다운로드

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CYStech Electronics Corp.
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTD07N04I3
BVDSS
ID@VGS=10V, TC=25°C
40V
50A
RDS(ON)@VGS=10V, ID=20A 6.3 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=10A 8.4 mΩ(typ)
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTD07N04I3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTD07N04I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTD07N04I3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.5mH, ID=18A, VDD=25V
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
(Note 1)
(Note 1)
(Note 2)
(Note 2)
PD
PDSM
Tj, Tstg
Limits
40
±20
63
40
50
13.5
10.8
200
18
81
54
21
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.3
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
MTD07N04I3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 3/ 8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
40 -
-
V VGS=0V, ID=250μA
- 0.03 -
V/°C Reference to 25°C, ID=250μA
1.5 - 2.5
V VDS = VGS, ID=250μA
- 22 -
S VDS =5V, ID=10A
- - ±100 nA VGS=±20V
-
-
-
-
1
10
μA
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=85°C
-
-
6.3 7.6
8.4 10
mΩ
VGS =10V, ID=20A
VGS =4.5V, ID=10A
Dynamic
*Qg(VGS=10V)
*Qg(VGS=4.5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
-
-
-
-
-
-
-
-
-
-
-
-
31
15.7
6
7
14.6
18.8
43.4
8
1517
188
116
1.6
46.5
-
-
-
-
-
-
-
-
-
-
-
nC VDD=20V, ID=20A,VGS=10V
ns VDD=20V, ID=1A, VGS=10V, RG=1Ω
pF VGS=0V, VDS=20V, f=1MHz
Ω f=1MHz
Source-Drain Diode
*IS -
*VSD
-
*trr -
*Qrr -
- 50
0.86 1.1
14 -
8.6 -
A
V IS=20A, VGS=0V
ns
nC
VGS=0, IF=20A, dIF/dt=360A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTD07N04I3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 4/ 8
Typical Characteristics
Typical Output Characteristics
180
10V,9V,8V,7V
150
VGS=6V
120
90
60
30
0
0
VGS=5V
VGS=4.5V
VGS=4V
12 34
VDS, Drain-Source Voltage(V)
5
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=4.5V
10
VGS=10V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
0.8
Tj=25°C
0.6
Tj=150°C
0.4
1
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
70
60 ID=20A
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.0 VGS=10V, ID=20A
RDS(ON)@Tj=25°C : 6.3mΩ typ.
1.6
1.2
0.8
VGS=4.5V, ID=10A
0.4 RDS(ON)@Tj=25°C : 8.4mΩtyp.
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD07N04I3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C140I3
Issued Date : 2015.06.01
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
100
Ciss 1.2
1
C oss
0.8
Crss 0.6
ID=1mA
ID=250μA
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDSON
Limited
100
100μs
1ms
10ms
10 100ms
1s
1 TC=25°C, Tj=150°C
VGS=10V, RθJC=2.3°C/W
Single Pulse
DC
0.1
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
8
6
4
VDS=20V
2 ID=20A
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
70
60 Silicon Limit
50
40
30 Package Limit
20
10 VGS=10V, RθJC=2.3°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTD07N04I3
CYStek Product Specification