MTD2K5P20KM3.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 MTD2K5P20KM3 데이타시트 다운로드

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CYStech Electronics Corp.
-200V P-Channel Enhancement Mode MOSFET
MTD2K5P20KM3
Spec. No. : C097M3
Issued Date : 2016.06.17
Revised Date :
Page No. : 1/9
Features
Single Drive Requirement
Ultra High Speed Switching
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-0.6A
RDSON@VGS=-4V, ID=-0.6A
-200V
-0.67A
1.9Ω(typ.)
2Ω(typ.)
Symbol
MTD2K5P20KM3
Outline
SOT-89
GGate
SSource
DDrain
G DD S
Ordering Information
Device
MTD2K5P20KM3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 : 1000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTD2K5P20KM3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C097M3
Issued Date : 2016.06.17
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Pulsed Drain Current
Total Power Dissipation (TA=25)
ID
IDM
PD
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board
*3. Pulse width300μs, duty cycle2%
Limits
-200
±20
-0.67
-0.54
-2.8 *1, 3
2 *2
0.02
-55~+150
Unit
V
A
W
W/°C
°C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
62.5*
* Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
BVDSS/Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTD2K5P20KM3
Min.
-200
-
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
-0.1 -
- -2.4
10 -
- ±10
- -1
- -25
1.9 2.5
2.0 4.0
379
28
21
41.2
75.6
31.8
404.4
-
-
-
-
-
-
-
Unit Test Conditions
V
V/°C
V
S
μA
Ω
VGS=0V, ID=-250μA
Reference to 25°C, ID=-250μA
VDS=VGS, ID=-250μA
VDS=-5V, ID=-3A
VGS=±20V, VDS=0V
VDS=-200V, VGS=0V
VDS=-200V, VGS=0V (Tj=70°C)
ID=-0.6A, VGS=-10V
ID=-0.6A, VGS=-4V
pF VDS=-25V, VGS=0V, f=1MHz
ns
VDS=-100V, ID=-0.6A, VGS=-10V,
RG=6Ω
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C097M3
Issued Date : 2016.06.17
Revised Date :
Page No. : 3/9
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
-
-
-
-
-
11.3
1.3
3.0
-0.84
31.3
36.4
-
-
-
-1.2
-
-
nC VDS=-160V, ID=-0.6A, VGS=-10V
V VGS=0V, IS=-0.6A
ns
nC
IF=-0.6A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended soldering footprint
MTD2K5P20KM3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C097M3
Issued Date : 2016.06.17
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
3.0
10V,9V,8V,7V,6V,5V,4V
2.5
2.0
1.5
-VGS=3.5V
1.0
0.5 -VGS=3V
0.0
0
5 10 15 20 25 30 35 40 45 50
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
5
4.5
4 VGS=-4V
-4.5V
3.5 -10V
3
2.5
2
1.5
1
0.5
0
0.001
0.01 0.1
1
-ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
20
18 ID=-0.6A
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6 Tj=150°C
0.4
0.2
0
0.5 1 1.5 2 2.5
-IDR, Reverse Drain Current (A)
3
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2 VGS=-10V, ID=-0.6A
RDSON@Tj=25°C : 1.9Ω typ.
1.6
1.2
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD2K5P20KM3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C097M3
Issued Date : 2016.06.17
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
ID=-1mA
1
10 0.8
C oss Crss 0.6 ID=-250μA
1
0 5 10 15 20 25 30
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8 VDS=-100V
1 VDS=-40V
6
0.1 VDS=-15V
Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
-ID, Drain Current(A)
10
Maximum Safe Operating Area
10
RDS(ON)
1 Limited
100μs
1ms
0.1
0.01
TA=25°C, Tj=150°C
VGS=-10V, RθJA=62.5°C/W
Single Pulse
10ms
100ms
DC
0.001
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
4 VDS=-160V
2
ID=-0.55A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 TA=25°C, VGS=-10V, RθJA=62.5°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTD2K5P20KM3
CYStek Product Specification