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MUN5137DW1,
NSBA144WDXV6,
NSBA144WDP6
Dual PNP Bias Resistor
Transistors
R1 = 47 kW, R2 = 22 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
baseemitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
MUN5137DW1T1G
SOT363
3,000 / Tape & Reel
NSVMUN5137DW1T1G
SOT363
3,000 / Tape & Reel
NSBA144WDXV6T1G
SOT563
4,000 / Tape & Reel
NSBA144WDP6T5G
SOT963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
October, 2013 Rev. 1
1
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PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
0P M G
G
1
SOT363
CASE 419B
0P M G
1G
SOT563
CASE 463A
MG
1G
SOT963
CASE 527AD
0P/J
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTA144WD/D

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MUN5137DW1, NSBA144WDXV6, NSBA144WDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5137DW1 (SOT363) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5137DW1 (SOT363) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBA144WDXV6 (SOT563) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBA144WDXV6 (SOT563) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBA144WDP6 (SOT963) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBA144WDP6 (SOT963) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR4 @ 500 mm2, 1 oz. copper traces, still air.
TJ, Tstg
Max Unit
187 mW
256
1.5 mW/°C
2.0
670 °C/W
490
250
385
2.0
3.0
493
325
188
208
55 to +150
mW
mW/°C
°C/W
°C/W
°C
357 mW
2.9 mW/°C
°C/W
350
500
4.0
250
55 to +150
mW
mW/°C
°C/W
°C
231 mW
269
1.9 mW/°C
2.2
540 °C/W
464
339
408
2.7
3.3
369
306
55 to +150
mW
mW/°C
°C/W
°C
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MUN5137DW1, NSBA144WDXV6, NSBA144WDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
CollectorEmitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
EmitterBase Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
CollectorBase Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
CollectorEmitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
hFE 80
CollectorEmitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.2 V, IC = 3.0 mA)
Vi(on)
Output Voltage (on)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
VOL
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Input Resistor
R1 32.9
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
R1/R2
1.7
Typ
140
1.7
2.7
47
2.1
Max
100
500
0.13
0.25
0.2
61.1
2.6
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
400
350
300
250
200
(1) (2) (3)
150
(1) SOT363; 1.0 x 1.0 inch Pad
(2) SOT563; Minimum Pad
(3) SOT963; 100 mm2, 1 oz. copper trace
100
50
0
50 25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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MUN5137DW1, NSBA144WDXV6, NSBA144WDP6
TYPICAL CHARACTERISTICS
MUN5137DW1, NSBA144WDXV6
1 1000
TA = 25°C
75°C
0.1 100
75°C
TA = 25°C
25°C
0.01
0
25°C
IC/IB = 10
5 10 15 20 25 30 35 40 45 50
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
10 1
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
10 100
9 f = 10 kHz 75°C
8
7
IE = 0 A
TA = 25°C
10
TA = 25°C
6 1 25°C
5
4 0.1
3
2
0.01
VO = 5 V
1
0
0 10
0.001
20 30 40 50
0 1 2 3 4 5 6 7 8 9 10 11
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
VO = 0.2 V
10
TA = 25°C
75°C
1 25°C
05
10 15 20 25
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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10
IC/IB = 10
1
MUN5137DW1, NSBA144WDXV6, NSBA144WDP6
TYPICAL CHARACTERISTICS
NSBA144WDP6
1000
VCE = 10 V
100
25°C
150°C
55°C
0.1 150°C
0.01
0
25°C
55°C
10 20
30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
10
1
50 0.1
1 10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
7 100
f = 10 kHz
6
IE = 0 A
TA = 25°C
10
55°C
5
41
25°C
3 0.1
2 150°C
0.01
1
0
0 10
0.001
VO = 5 V
20 30 40 50
04
8 12 16 20 24 28
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
Vin, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
25°C
10
55°C
1 150°C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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