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Ordering number : ENA2166
CPH6635
Power MOSFET
30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6
http://onsemi.com
Features
Excellent ON-resistance characteristic (P-Channel : RDS(on)1=215mΩ (typ.))
Optimal for load switch use (N-Channel for drive is embedded)
N-Channel : 1.5V drive, P-Channel : 1.8V drive
Halogen Free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
N-channel P-channel
30 --20
±10 ±10
0.4 --1.5
1.6 --6.0
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-007
2.9
654
Ordering & Package Information
Device
Package
Shipping
memo
CPH6635-TL-H
CPH6
SC-74, SOT-26, SOT-45
3,000
pcs./reel
Pb Free
and
Halogen Free
0.15 CPH6635-TL-H
Packing Type: TL
Marking
0.05
12
0.95
3
0.4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
CPH6
TL
Electrical Connection
65
4
1 23
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002929/10913 TKIM No. A2166-1/8

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CPH6635
Electrical Characteristics at Ta=25°C
Parameter
Symbol
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--800mA
ID=--800mA, VGS=--4.5V
ID=--400mA, VGS=--2.5V
ID=--200mA, VGS=--1.8V
VDS=--10V, f=1MHz
See specied Test Circuit.
VDS=--10V, VGS=--4V, ID=--1.5A
IS=--1.5A, VGS=0V
Ratings
min typ max
Unit
30 V
1 μA
±10 μA
0.4 1.3 V
0.22
S
2.9 3.7 Ω
3.7 5.2 Ω
6.4
12.8
Ω
7 pF
5.9 pF
2.3 pF
19 ns
65 ns
155 ns
120 ns
1.58
nC
0.26
nC
0.31
nC
0.87
1.2 V
--20
--0.4
1.9
215
310
450
120
26
20
5.3
9.7
16
14
1.7
0.28
0.47
--0.9
--1
±10
--1.4
280
434
675
--1.5
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No.8987-2/8

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Switching Time Test Circuit
[N-channel]
VIN
4V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=150mA
RL=100Ω
D VOUT
CPH6635
P.G 50Ω S
CPH6635
[P-channel]
VIN
0V
--4.5V
VIN
PW=10μs
D.C.1%
G
VDD= --10V
ID= --800mA
RL=12.5Ω
D VOUT
CPH6635
P.G 50Ω S
ID -- VDS
[Nch]
0.16
0.14 3.5V
4.0V
0.12
0.10
2.0V
0.08
VGS=1.5V
0.06
0.04
0.02
0
0 0.2 0.4 0.6 0.8 1.0
Drain to Source Voltage, VDS -- V IT00029
RDS(on) -- VGS
[Nch]
10
Ta=25°C
9
8
7
6 ID=80mA
5 40mA
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
Gate to Source Voltage, VGS -- V IT00031
0.30
VDS=10V
0.25
ID -- VGS
[Nch]
0.20
0.15
0.10
0.05
0
0
10
7
5
3
2
0.5 1.0
1.5 2.0
2.5 3.0
Gate to Source Voltage, VGS -- V
RDS(on) -- ID
IT00030
[Nch]
VGS=4V
Ta=75°C
25°C
--25°C
1.0
0.01
23
5 7 0.1
23
Drain Current, ID -- A
5 7 1.0
IT00032
No. A2166-3/8