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STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
DESCRIPTION
STN4972 is the Dual N-Channel logic enhancement mode power field effect
transistors which are produced using high cell density DMOS trench technology. It is
suitable for the power management applications in the portable or battery powered
system.
PIN CONFIGURATION
SOP-8
FEATURE
z 30V/8.5A, RDS(ON) = 14mΩ@VGS = 10V
z 30V/7.8A, RDS(ON) = 18mΩ@VGS = 4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
Package
Part Marking
STN4972S8RG
SOP-8
STN4972
STN4972S8TG
SOP-8
STN4972
Process Code : A ~ Z ; a ~ z
STN9972S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STN9972S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1

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STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current
(TJ=150)
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25
TA=70
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
8.5
7.5
25
2.3
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1

No Preview Available !

STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
30
VGS(th) VDS=VGS,ID=250 uA 1.0
V
3.0 V
Gate Leakage Current
Zero Gate Voltage Drain
Current
IGSS
IDSS
TJ=55
VDS=0V,VGS=±20V
VDS=24VGS=0V
VDS=24VGS=0V
±100 nA
1
5 uA
On-State Drain Current
Drain-source On-Resistance
Forward Tran Conductance
ID(on)
RDS(on)
gfs
VDS5V,VGS=10
VGS=10V, ID=8.5A
VGS=4.5V, ID=7.8A
VDS=15.0V,ID=6.2A
25 A
0.012 0.014 Ω
0.015 0.018
13 S
Diode Forward Voltage
VSD IS=2.3A,VGS=0V
0.8 1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=15V,VGS=10V
ID=2A
VDS=15.0V,VGS=0V
f=1MHz
16
4.2
2.5
1350
258
150
nC
pF
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD=15V,RL=15Ω
ID=5A,VGEN=10V
RG=1Ω
15 20
6 16 nS
20 40
12 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1

No Preview Available !

STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
TYPICAL CHARACTERICTICS (25Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1

No Preview Available !

STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
TYPICAL CHARACTERICTICS (25Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1