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Advanced Power
Electronics Corp.
AP70T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching
RoHS Compliant
G
D
S
Description
AP70T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP70T03GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
30V
9mΩ
60A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30 V
+20 V
60 A
43 A
195 A
53 W
0.36 W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.8
62.5
110
Units
/W
/W
/W
1
201408266

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AP70T03GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=33A
30 -
--
-V
9 m
VGS=4.5V, ID=20A
- - 18 m
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=33A
Drain-Source Leakage Current
VDS=24V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V
Gate-Source Leakage
VGS= +20V, VDS=0V
Total Gate Charge
ID=33A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
VDS=15V
Rise Time
ID=33A
Turn-off Delay Time
RG=3.3Ω
Fall Time
VGS=10V
Input Capacitance
.VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
1 - 3V
- 35 -
S
- - 10 uA
- - 250 uA
- - +100 nA
- 17 27 nC
- 5 - nC
- 10 - nC
- 8 - ns
- 105 -
ns
- 22 - ns
- 9 - ns
- 1485 2400 pF
- 245 - pF
- 170 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=33A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 27 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2

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AP70T03GH/J-HF
200
T C =25 o C
150
100
10V
8.0V
6.0V
50
V G =4.0V
0
0.0 1.5 3.0 4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
120
T C =175 o C
90
10V
8.0V
6.0V
60
V G =4.0V
30
0
0.0 1.5 3.0 4.5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
60
I D =20A
T C =25
40
2
I D =33A
V G =10V
1.6
. 1.2
20
0.8
0
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
1000
0.4
-50 25 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
175
2.5
100
10 T j =175 o C
T j =25 o C
2
1.5
11
0.1
0 0.5 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
0.5
-50 25 100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
175
3

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AP70T03GH/J-HF
12
I D =33A
9
V DS =16V
V DS =20V
V DS =24V
6
10000
1000
f=1.0MHz
C iss
3
0
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
100 10us
100us
10
1ms
T C =25 o C
Single Pulse
1
0.1
1
10ms
100ms
1s
DC10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
.
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4

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MARKING INFORMATION
TO-251
AP70T03GH/J-HF
70T03GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
TO-252
70T03GH
YWWSSS
Part Number
.meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
5