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Advanced Power
Electronics Corp.
AP65SL600AH
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP65SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
VDS @ Tj,max.
RDS(ON)
ID
700V
0.6Ω
7A
G
D
S
TO-252(H)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
650 V
VGS
ID@TC=25
ID@TC=100
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
7A
4.4 A
18 A
dv/dt
PD@TC=25
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
50
62.5
V/ns
W
PD@TA=25
EAS
dv/dt
Total Power Dissipation
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
2W
36.7 mJ
15 V/ns
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value
2
62.5
Units
/W
/W
Data & specifications subject to change without notice
1
201505201

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AP65SL600AH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=2A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs Forward Transconductance
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Source-Drain Diode
VDS=10V, ID=2A
VDS=480V, VGS=0V
VGS=+20V, VDS=0V
ID=2A
VDS=480V
VGS=10V
VDD=300V
ID=2A
RG=3.3
VGS=10V
VGS=0V
VDS=100V
.f=1.0MHz
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=2A, VGS=0V
IS=7A, VGS=0V
dI/dt=50A/µs
Min. Typ. Max. Units
650 -
-V
- - 0.6 Ω
2 - 5V
-5-S
- - 100 uA
- - +100 nA
- 20 32 nC
- 4 - nC
- 9 - nC
- 8 - ns
- 20 - ns
- 28 - ns
- 23 - ns
- 740 1184 pF
- 28 - pF
- 2 - pF
- 3.8 7.6 Ω
Min. Typ. Max. Units
- 0.8 -
V
- 280 -
ns
- 1.8 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Surface mounted on 1 in2 copper pad of FR4 board
5.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω
6.ISD ID, VDD BVDSS, starting TJ = 25oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2

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AP65SL600AH
16
T C =25 o C
12
8
8
10V
9.0V
T C =150 o C
10V
9.0V
8.0V 8.0V
6 7.0V
0.37Ω
7.0V
4
V G =6.0V
4
V G =6.0V
0
0 8 16 24 32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
580
I D =2A
560 T C =25 o C
540
.520
500
480
460
5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T j = 150 o C
2
T j = 25 o C
0
0 0.2 0.4 0.6 0.8 1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
4
I D =2A
V G =10V
3
2
1
0
-100
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2
I D =250uA
1.6
1.2
0.8
0.4
0
-100
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3

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AP65SL600AH
12
I D =2A
10 V DS =480V
8
6
4
2
0
0 8 16 24
Q G , Total Gate Charge (nC)
32
Fig 7. Gate Charge Characteristics
f=1.0MHz
10000
C1000
iss
0.37Ω
100
C10 oss
C rss
1
0.1
0
100 200 300 400 500 600 700
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100 1
Duty factor=0.5
10 Operation in this area
limited by RDS(ON)
10us
100us
1
T C =25 o C
1ms
10ms
Single Pulse
100ms
0.1
1
1s
DC10 100 1000
V DS , Drain-to-Source Voltage (V)
.
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
80
60
40
20
0
0 50 100
T C , Case Temperature ( o C )
Fig 11. Total Power Dissipation
150
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 12. Normalized BVDSS v.s. Junction
Temperature
4

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MARKING INFORMATION
65SL600A
YWWSSS
Part Number
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
AP65SL600AH
.
5