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AL5802LPL
LED DRIVER, 30V, LINEAR, ADJUSTABLE, CURRENT SINK
Description
The AL5802LPL combines a high-gain NPN transistor with a pre-
biased NPN transistor to make a simple, small footprint LED driver.
Pin Assignments
The LED current is set by an external resistor connected from the
REXT Pin (4) to the GND Pin (6), and the internal high gain transistor
develops approximately 0.6V across the external resistor.
The AL5802LPL’s open-collector output can operate from 0.8V to 30V
making it suitable for industry standard 5V to 24V power supplies
without additional components.
PWM dimming of the LED current can be achieved by either driving
the BIAS Pin (1) with a low impedance voltage source, or driving the
EN Pin (5) with an external open-collector NPN transistor or
open-drain N-Channel MOSFET.
The AL5802LPL is available in a U-DFN3030-6 (Type B) package and
is ideal for driving 10mA to 120mA LED currents.
123
7
Internal Schematic
(Top View)
6 54
(Bottom View)
Package: U-DFN3030-6 (Type B)
The Collector of Q2 is Connected to Pin 2 and Pad 7 which is on
the Underside of the Package
Pin 3 is Not Connected to Anything
Features
Reference Voltage VREXT = 0.65V
-40 to +125°C Operating Temperature Range
0.8V to 30V Open-Collector Output
Negative Temperature Coefficient Automatically Reduces the
LED Current at High Temperatures
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN3030-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94-V-0.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0156 grams
Ordering Information (Note 4)
Device
AL5802LPL
Qualification
Commercial
Packaging
U-DFN3030-6 (Type B)
Tape and Reel
Quantity
Part Number Suffix
3,000/Tape & Reel
-7
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
AL5802LPL
Document number: DS38590 Rev. 3 - 2
1 of 11
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April 2016
© Diodes Incorporated

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AL5802LPL
Marking Information
5802 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2016
D
Month
Code
Jan
1
2017
E
Feb Mar
23
2018
F
Apr
4
2019
G
May
5
2020
H
Jun Jul
67
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct Nov
ON
2024
L
Dec
D
Typical Application Circuit
Pin Descriptions
Pin Number
1
2
3
4
5
6
Name
BIAS
OUT
N/C
REXT
EN
GND
Function
Biases the Open Collector Output Transistor
Open-Collector LED Driver Output
No Connection
Current Sense Pin
LED current sensing resistor should be connected from here to GND
Enable Pin for PWM Dimming
Provides access to the base of Q2 and the collector of Q1
Ground Reference Point for Setting LED Current
AL5802LPL
Document number: DS38590 Rev. 3 - 2
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Functional Block Diagram
AL5802LPL
Figure 1 Block Diagram
Absolute Maximum Ratings (Note 5)
Note:
Symbol
VOUT
VBIAS
VFB
VEN
VREXT
IOUT
TOP
TSTG
Characteristics
Output Voltage Relative to GND
BIAS Voltage Relative to GND
LED Voltage Relative to GND
EN Voltage Relative to GND
REXT Voltage Relative to GND
Output Current
Operating Temperature
Storage Temperature
Values
30
30
6
6
6
150
-40 to +150
-55 to +150
Unit
V
V
V
V
V
mA
°C
°C
5. These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for
extended periods of time may reduce device reliability.
Package Thermal Data
Characteristic
Power Dissipation (Note 6) (@TA = +25°C)
Thermal Resistance, Junction to Ambient Air (Note 6) (@TA = +25°C)
Symbol
PD
RθJA
Value
0.88
145
Unit
W
°C/W
Recommended Operating Conditions
Symbol
VBIAS
VOUT
ILED
TA
Parameter
Supply Voltage Range
OUT Voltage Range
LED Pin Current (Note 7)
Operating Ambient Temperature Range
Min
4.5
0.8
10
-40
Notes:
6. Device mounted on FR-4 PCB, single-sided, 2oz copper trace weight with minimum recommended pad layout.
7. Subject to ambient temperature, power dissipation and PCB substrate material selection.
Max
30
30
120
+125
AL5802LPL
Document number: DS38590 Rev. 3 - 2
3 of 11
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Unit
V
mA
°C
April 2016
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AL5802LPL
Electrical Characteristics NPN Transistor Q1 (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
Characteristic
Collector-Emitter Breakdown Voltage (Notes 8 & 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current (Note 9)
Base Cutoff Current (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Test Condition
IC = 1.0mA, IB = 0
IE = 10µA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 1.0mA
VCE = 1.50V, IC = 2.0mA
Min
40
6.0
70
100
0.65
0.30
Typ
Max
50
50
300
0.20
0.85
1.10
Unit
V
V
nA
nA
V
V
V
Electrical Characteristics NPN Pre-Biased Transistor Q2 (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
VBE(ON)
hFE
R1
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage (Note 9)
Collector Cutoff Current
Emitter Cutoff Current (Note 9)
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage
DC Current Gain (Note 8)
Input Resistance
Test Condition
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50μA, IC = 0
VCB = 30V, IE = 0
VEB = 4V, IC = 0
IC = 10mA, IB = 1mA
VCE = 5.0V, IC = 2.0mA
VCE = 5V, IC = 150mA
Min Typ Max
30 — —
30 — —
5.0 — —
— — 0.5
— — 0.5
— — 0.3
0.30 1.10
100
7 10 13
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to
the testability of the device changed after packaging multiple dies to form an application circuit.
Unit
V
V
V
µA
µA
V
V
kΩ
AL5802LPL
Document number: DS38590 Rev. 3 - 2
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Thermal Characteristics
AL5802LPL
VOUT (V)
Figure 3 Output Current vs. VOUT
100
50
Vbias = 24V
Vout = 1.4V
Vout = 5.4V
0
1 10 100
Figure 4 Output Current vs. Rext
Rext ( Ω)
VOUT (V)
Figure 5 Output Current vs. VOUT
VOUT (V)
Figure 6 Output Current vs. VOUT
AL5802LPL
Document number: DS38590 Rev. 3 - 2
5 of 11
www.diodes.com
April 2016
© Diodes Incorporated