AP9938AGEY-HF.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 AP9938AGEY-HF 데이타시트 다운로드

No Preview Available !

Advanced Power
Electronics Corp.
AP9938AGEY-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Capable of 2.5V Gate Drive
Low On-resistance
Surface Mount Package
RoHS Compliant & Halogen-Free
D1/D2
2928-8
G2
S2
G1
S1
Description
AP9938A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
20V
16mΩ
7.5A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 4.5V3
Drain Current, VGS @ 4.5V3
Pulsed Drain Current1
20 V
+12 V
7.5 A
6A
40 A
PD@TA=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
1.38
-55 to 150
-55 to 150
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
90
Unit
/W
1
201412182

No Preview Available !

AP9938AGEY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V, ID=250uA
VGS=4.5V, ID=6A
VGS=2.5V, ID=4A
VDS=VGS, ID=250uA
VDS=5V, ID=6A
VDS=16V, VGS=0V
VGS=+12V, VDS=0V
ID=6A
VDS=10V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3
VGS=5V
VGS=0V
VDS=10V
f=1.0MHz
f=1.0MHz
Test Conditions
IS=1.1A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
20
-
-
0.35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13.2
17
0.6
23.6
-
-
12
1.2
3.5
7
10
21
7.5
850
130
120
1.4
-
16
24
1
-
10
+30
19.2
-
-
-
-
-
-
1360
-
-
2.8
V
mΩ
mΩ
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Min. Typ. Max. Units
- - 1.2 V
- 17 - ns
- 5 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 210 oC/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2

No Preview Available !

50
T A =25 o C
5.0V
4.5V
40 3.5V
2.5V
30
V G =1.8V
20
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
22
I D =2A
T A =25 o C
20
18
16
14
12
12345
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T j =150 o C
T j =25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP9938AGEY-HF
40
T A = 150 o C
5.0V
4.5V
3.5V
30 2.5V
V G =1.8V
20
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =6A
V G =4.5V
1.4
1.0
0.6
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I D =250uA
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3

No Preview Available !

AP9938AGEY-HF
6
I D =6A
V DS =10V
5
4
3
2
1
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
1 10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
40
V DS =5V
30
f=1.0MHz
1200
1000
C800
iss
600
400
200
C oss
C rss
0
1 5 9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.01
0.0001
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=210oC/W
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
8
6
20 4
10 T j =150 o C
T j =25 o C
T j = -40 o C
0
0123
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
2
0
25 50 75 100 125 150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
4

No Preview Available !

MARKING INFORMATION
AP9938AGEY-HF
YY7YSS
Part Number : YY7
Date Code (YSS)
YLast Digit Of The Year
SSSequence
5