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Advanced Power
Electronics Corp.
AP9932GM
Pb Free Plating Product
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Full Bridge Application on
LCD Monitor Inverter
Description
P2G
N2D/P2D
P1S/P2S
P1G
SO-8
N2G
N1S/N2S
N1D/P1D
N1G
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
40mΩ
4.3A
-30V
70mΩ
-3.3A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
P1S P2S
P1G P2G
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
P1N1D
P2N2D
N1G
N1S N2S
Rating
N-channel P-channel
30 -30
± 12 ± 12
4.3 -3.3
3.4 -2.6
20 -20
1.38
0.01
-55 to 150
-55 to 150
N2G
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
90
Unit
/W
Data and specifications subject to change without notice
200920041

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AP9932GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=4A
VGS=2.5V, ID=2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=5V, ID=4A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±12V
ID=4A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RG=3.3Ω,VGS=5V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.03 - V/
- - 40 mΩ
- - 50 mΩ
- - 60 mΩ
0.5 - - V
- 13 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 15 nC
- 1.6 - nC
- 4 - nC
- 8 - ns
- 9 - ns
- 17 - ns
- 5 - ns
- 630 1000 pF
- 140 - pF
- 65 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=4A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 17 - ns
- 9 - nC

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AP9932GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
-30 -
-V
- -0.02 - V/
- - 70 mΩ
- - 90 mΩ
- - 120 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5 -
-V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VDS=-5V, ID=-3A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS=±12V
ID=-3A
VDS=-24V
VGS=-4.5V
VDS=-15V
- 8 -S
- - -1 uA
- - -25 uA
- - ±100 nA
- 10 16 nC
- 2 - nC
- 3 - nC
- 8 - ns
tr Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
tf Fall Time
RD=15Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 9 - ns
- 25 - ns
- 14 - ns
- 690 1100 pF
- 170 - pF
- 75 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-3A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 25 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 186 /W when mounted on Min. copper pad.

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AP9932GM
N-Channel
21
18
T A =25 o C
10V
7.0V
15 5.0V
4.5V
12 V G =2.5V
9
6
3
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
55 I D = 2 A
T A =25 o C
50
45
40
35
30
02468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T j =150 o C
2
T j =25 o C
1
0
0 0.2 0.4 0.6 0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
21
T A = 150 o C
10V
18 7.0V
5.0V
4.5V
15
V G =2.5V
12
9
6
3
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D =4A
1.4 V G =4.5V
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2.0
1.5
1.0
0.5
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature

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N-Channel
12
ID=4A
10 V DS = 24 V
8
6
4
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
AP9932GM
f=1.0MHz
1000
C iss
C oss
100
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 186/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform