AP9985GM-HF.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 AP9985GM-HF 데이타시트 다운로드

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Advanced Power
Electronics Corp.
AP9985GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
SG
S
S
Description
AP9985 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
BVDSS
RDS(ON)
ID
40V
15mΩ
10A
D
G
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
40 V
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
10
8
48
2.5
-55 to 150
-55 to 150
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-amb
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
/W
1
201410213

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AP9985GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=10A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=32V, VGS=0V
VGS= +20V, VDS=0V
ID=10A
VDS=20V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
40 - - V
- - 15 m
- - 25 m
1 - 3V
- 35 -
S
- - 10 uA
- - +100 nA
- 14.7 - nC
- 7.1 - nC
- 6.8 - nC
- 11.5 -
ns
- 6.3 -
ns
- 28.2 -
ns
- 12.6 -
ns
- 1725 - pF
- 235 - pF
- 145 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=2.3A, VGS=0V
Min. Typ. Max. Units
- - 1.92 A
- - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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AP9985GM-HF
50
T A =25 o C
10V
6.0V
40 5.0V
4.5V
30
20 V G = 4.0 V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
T A = 150 o C
40
30
20
10V
6.0V
5.0V
4.5V
V G = 4 .0 V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
70
I D =10A
60 T A =25
50
.40
30
20
10
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
4
T j =25 o C
2
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
2.0
I D =10A
V G =10V
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4.0
150
3.0
2.0
1.0
0.0
-50
-25 0 25 50 75 100 125
T j , Junction Temperature (oC)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3

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AP9985GM-HF
10
I D =10A
8
V DS =12V
V DS =16V
6
V DS =20V
4
2
0
0 4 8 12 16 20 24
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
2400
2000
C1600 iss
1200
800
400
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
1 10ms
100ms
0.1 1s
T A =25 o C
Single Pulse
0.01
0.01
0.1
1
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1 0.1
0.05
. 0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=125 /W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4

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MARKING INFORMATION
AP9985GM-HF
9985GM
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
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