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Advanced Power
Electronics Corp.
AP95T10GI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
RoHS Compliant & Halogen-Free
G
D
S
Description
AP95T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
BVDSS
RDS(ON)
ID
100V
6.4mΩ
60A
GD S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
100
+20
60
43
240
60
-55 to 175
-55 to 175
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.5
65
Units
/W
/W
1
201410142

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AP95T10GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=80V, VGS=0V
VGS= +20V, VDS=0V
ID=30A
VDS=80V
VGS=10V
VDS=50V
ID=30A
RG=25Ω
VGS=10V
VGS=0V
VDS=25V
.f=1.0MHz
f=1.0MHz
100 - - V
- - 6.4 mΩ
2 - 4V
- 105 -
S
- - 25 uA
- - +100 nA
- 110 176 nC
- 19 - nC
- 58 - nC
- 70 - ns
- 210 - ns
- 300 - ns
- 240 - ns
- 5870 9400 pF
- 910 - pF
- 375 - pF
- 2 -Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=30A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 75 - ns
- 200 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2

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AP95T10GI-HF
320
T C = 25 o C
240
160
160
10V
8.0V
T C = 175 o C
10V
8.0V
7.0V
7.0V
120 6.0V
6.0V
80
V GS =5.0V
80
V GS =5.0V
0
0 4 8 12 16 20 24 28
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
0
0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
12
I D =40A
T A =25 o C
10
.8
6
4
4 5 6 7 8 9 10
V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
60
50
40
T j =175 o C
30
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
3.0
I D =60A
2.6 V G =10V
2.2
1.8
1.4
1.0
0.6
0.2
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
200
1.2
0.8
0.4
0.0
-50 0 50 100 150 200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3

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AP95T10GI-HF
12
I D = 40 A
V DS =50V
10
V DS =60V
V DS =80V
8
6
4
2
0
0 40 80 120
Q G , Total Gate Charge (nC)
160
Fig 7. Gate Charge Characteristics
f=1.0MHz
8000
6000
C iss
4000
2000
C oss
C rss
0
1 5 9 13 17 21 25 29 33 37
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100 Operation in this
area limited by
RDS(ON)
10
100us
1ms
10ms
1
T c =25 o C
Single Pulse
100ms
1s
DC
0.1
0.01 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
. 0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4

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MARKING INFORMATION
AP95T10GI-HF
95T10GI
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
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