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Advanced Power
Electronics Corp.
AP73T03AGMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
D BVDSS
SO-8 Compatible with Heatsink
RDS(ON)
Low On-resistance
RoHS Compliant & Halogen-Free
G
ID
S
Description
AP73T03A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK ® 5x6 ppackage is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
S
S
S
G
30V
9.5mΩ
52A
D
D
D
D
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
30
+20
52
18.1
14.4
160
41.6
5
28.8
-55 to 150
-55 to 150
V
V
A
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
3
25
Unit
/W
/W
1
201501063

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AP73T03AGMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=20A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
30 - - V
- - 9.5 mΩ
- - 16 mΩ
1 - 3V
- 40 -
S
- - 10 uA
- - +100 nA
- 6 9.6 nC
- 1.5 - nC
- 3 - nC
- 8 - ns
- 9 - ns
- 21 - ns
- 7 - ns
- 630 1008 pF
- 220 - pF
- 70 - pF
- 3.1 6.2 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 17 - ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2

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160
T C =25 o C
10V
7.0V
6.0V
120
5.0V
80
V G = 4.0V
40
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
I D = 20 A
T C =25 o C
10
8
6
4
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
24
18
T j =150 o C
T j =25 o C
12
6
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP73T03AGMT-HF
120
T C = 150 o C
10V
7.0V
100 6.0V
80 5.0V
V G = 4.0V
60
40
20
0
0 2 4 6 8 10
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =20A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I D =1mA
150
1.2
0.8
0.4
0.0
-50
0
50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3

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AP73T03AGMT-HF
10
I D = 20 A
V DS =15V
8
6
4
2
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100 Operation in this
area limited by
RDS(ON)
100us
10 1ms
T C =25 o C
Single Pulse
10ms
100ms
DC
1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
100
V DS =5V
80
60
40
T j =150 o C
20
T j =25 o C
T j =-40 o C
0
012345
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
f=1.0MHz
1000
800
C600 iss
400
C200 oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
80
60
40
20
0
25 50 75 100 125 150
T C , Case Temperature ( o C )
Fig 12. Drain Current v.s. Case Temperature
4

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MARKING INFORMATION
AP73T03AGMT-HF
73T03AGMT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : MT
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
5