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2SD1047
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC
Application
Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
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Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
TJ
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
Rthj-case
Thermal data
Parameter
Thermal resistance junction-case ____max
2SD1047
Value
200
140
6
12
20
100
-65 to 150
150
Unit
V
V
V
A
A
W
°C
°C
Value
1.25
Unit
°C/W
2/10 Doc ID 018729 Rev 1

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2SD1047
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 200 V
0.1 µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
0.1 µA
V(BR)CEO(1)
Collector-emitter
breakdown voltage (IB = 0)
IC = 50 mA
140
V
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
200
V
V(BR)EBO(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
6
V
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = 5 A
IC = 7 A
IB = 500 mA
IB = 700 mA
0.5 V
0.7 V
VBE Base-emitter voltage
VCE = 5 V IC = 5 A
1.3 V
hFE DC current gain
IC = 1 A
IC = 5 A
VCE = 5 V
VCE = 4 V
60
50
200
fT Transition frequency
IC = 0.5 A VCE = 12 V
20
MHz
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V f = 1 MHz
150
pF
Resistive Load
ton Turn-on time
tstg Storage time
tf Fall time
VCC = 60 V IC = 5 A
IB1 = -IB2 = 0.5 A
0.22 µs
4.3 µs
0.5 µs
1. Pulse duration = 300 µs, duty cycle 1.5 %
Doc ID 018729 Rev 1
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