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ST 2SD1616 / 2SD1616A
NPN Silicon Transistor
The 2SD1616 / 2SD1616A are designed for use in
driver and output stages of AF amplifier general
purpose application.
The transistor is subdivided into three groups R, O
and Y, according to its DC current gain
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 OC)
Collector Base Voltage
2SD1616
2SD1616A
Collector Emitter Voltage
2SD1616
2SD1616A
Emitter Base Voltage
Collector Current (DC)
Collector Current (pulse)1)
Power Dissipation
Junction Temperature
Storage Temperature Range
1) PW? 10ms, Duty Cycle? 50%
Symbol
VCBO
VCEO
VEBO
IC
IC
Ptot
Tj
TS
G S P FORM A IS AVAILABLE
Value
60
120
50
60
6
1
2
0.75
150
-55 to +150
Unit
V
V
V
A
A
W
?
?
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®

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ST 2SD1616 / 2SD1616A
Characteristics at Tamb=25 OC
DC Current Gain 2)
at VCE=2V, IC=100mA
R
O
Y
at VCE=2V, IC=1A
Base Emitter Voltage 2)
at VCE=2V ,IC=50mA
Collector Cutoff Current
at VCB=60V/120V
Emitter Cutoff Current
at VEB=6V
Collector Saturation Voltage 2)
at IC=1A, IB=50mA
Base Saturation Voltage 2)
at IC=1A, IB=50mA
Gain Bandwidth Product
at VCE=2V, IC=-100mA
Output Capacitance
at VCB=10V, f=1MHz
Turn-on Time
at VCC=10V, IC=-100mA
Storage Time
IB1=-IB2=10 mA
Fall Time
VBE(off)=-2 to 3 V
2) Pulsed PW350µs, Duty Cycle2%
Symbol
hFE
hFE
hFE
hFE
VBE
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
COB
ton
tstg
tf
Min.
135
200
300
81
600
-
-
-
-
100
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
-
-
-
0.15
0.9
160
19
0.07
0.95
0.07
Max.
270
400
600
-
700
100
100
0.3
1.2
-
-
-
-
-
Unit
-
-
-
-
mV
nA
nA
V
V
MHz
pF
µs
µs
µs
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002