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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2223A
DESCRIPTION
·High frequency multi emitter transistor
·Small package(TO-3P)
·High power handling capacity ,160W
·Complement to Type 2SC6145A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Signal transistors for audio amplifiers
·Audio market
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-260
V
VCEO
Collector-Emitter Voltage
-260
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-15 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-4.0 A
160 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

No Preview Available !

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2223A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0
-260
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
ICBO Collector Cutoff Current
VCB= -260V; IE= 0
-0.5 V
-10 μA
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
-10 μA
hFE DC Current Gain
IC= -5A; VCE= -4V
40 140
COB Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
500 pF
fT
Current-Gain—Bandwidth Product
IC=-2A ; VCE= -12V
35 MHz
hFE Classifications
RO
Y
40-80
50-100 70-140
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark