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STB18NM60ND, STF18NM60ND,
STP18NM60ND, STW18NM60ND
N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet production data
TAB
3
1
D2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
' 7$%
* 
6 
$0Y
Features
Order codes
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
VDSS @
TJmax
650 V
RDS(on)
max
ID
<0.29 Ω 13 A
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Applications
Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
Table 1. Device summary
Marking
Package
D2PAK
18NM60ND
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2013
This is information on a product in full production.
DocID024653 Rev 1
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Contents
Contents
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 DocID024653 Rev 1

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STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
D2PAK, TO- TO-220FP Unit
220, TO-247
VDS Drain-source voltage
600
VGS Gate-source voltage
± 25
ID Drain current (continuous) at TC = 25 °C
13 13 (1)
ID Drain current (continuous) at TC = 100 °C
8.19
8.19 (1)
IDM (2) Drain current (pulsed)
52 52 (1)
PTOT Total dissipation at TC = 25 °C
130 30
dv/dt (3)
dv/dt (4)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
40
40
VISO
Tstg
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;TC=25 °C)
Storage temperature
-- 2500
-55 to 150
Tj Operating junction temperature
150
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD 13 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS, VDS(peak) V(BR)DSS
4. VDS 480 V
V
V
A
A
A
W
V/ns
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
D²PAK TO-220FP TO-220 TO-247 Unit
Rthj-case
Rthj-amb
Rthj-pcb
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
0.96
30
4.17 0.96
62.5
0.96 °C/W
50 °C/W
°C/W
Symbol
IAS
EAS
Table 4. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Max value
3.5
187
Unit
A
mJ
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Electrical characteristics
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Symbol
Parameter
Table 5. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1 mA, VGS= 0
VDS = 600 V,
VDS = 600 V, TC=125 °C
VGS = ±20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 6.5 A
Min. Typ. Max. Unit
600 V
1 µA
100 µA
±100 nA
345V
0.25 0.29 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f =1 MHz,
VGS = 0
- 1030 -
- 30 -
- 3.2 -
pF
pF
pF
Coss
(1)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480 V - 148 -
pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
- 3.6 -
open drain
Ω
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 13 A
VGS = 10 V
(see Figure 18)
- 34 - nC
- 5.5 - nC
- 20 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 6.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min Typ Max Unit
- 55 - ns
- 15.5 - ns
- 13 - ns
- 18 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD Source-drain current
- 13 A
ISDM (1) Source-drain current (pulsed)
- 52 A
VSD(2) Forward on voltage
ISD = 13 A, VGS=0
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
- 136
ISD =13 A, di/dt =100 A/µs,
VDD = 100 V
- 843
(see Figure 19)
- 12.5
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
- 198
di/dt =100 A/µs, ISD = 13 A - 1425
Tj = 150 °C (see Figure 19) - 14.5
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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