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Advanced Power
Electronics Corp.
AP90T03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On- resistance
Simple Drive Requirement
Fast Switching Characteristic
G
Description
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP90T03GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
30
± 20
75
63
350
96
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
1.3
110
Unit
/W
/W
Data & specifications subject to change without notice
201211031

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AP90T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS= ± 20V
ID=40A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-V
- 0.015 - V/
- - 4 mΩ
- - 6 mΩ
0.8 -
3V
- 55 - S
- - 1 uA
- - 25 uA
- - ±100 nA
- 60 96 nC
- 8.5
nC
- 38
nC
- 14 - ns
- 83 - ns
- 66 - ns
- 120 - ns
- 4090 6540 pF
- 1010 - pF
- 890 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 51 - ns
- 63 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

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200
T C =25 o C
160
120
80
10V
7.0V
5.0V
4.5V
V G =3.0V
40
0
0123
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
I D =20A
T C =25 o C
4.5
4.0
3.5
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
12
Fig 3. On-Resistance v.s. Gate Voltage
20
15
T j =150 o C
10
T j =25 o C
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP90T03GH/J
160
140 T C = 1 50 o C
120
100
80
10V
7.0V
5.0V
4.5V
V G =3.0V
60
40
20
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 2. Typical Output Characteristics
2.0
1.8 I D = 45 A
V G =10V
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
150
1.5
1
0.5
0
-50 25 100
T j , Junction Temperature ( o C)
175
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature