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MJD5731
High Voltage PNP Silicon
Power Transistors
Designed for line operated audio output amplifier, SWITCHMODE
power supply drivers and other switching applications.
Features
PNP Complements to the MJD47 thru MJD50 Series
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Symbol
VCEO
VEB
IC
ICM
PD
Max
350
5
1.0
3.0
15
0.12
Unit
Vdc
Vdc
Adc
Adc
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.56 W
0.0125 W/°C
Unclamped Inductive Load Energy
(See Figure 10)
E 20 mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
8.33 °C/W
Thermal Resistance, Junction−to−Ambient RqJA
(Note 2)
80 °C/W
Lead Temperature for Soldering
TL 260 °C
2. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 5
1
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SILICON
POWER TRANSISTORS
1.0 AMPERE
350 VOLTS, 15 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
12
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J
5731G
A
Y
WW
J5731
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJD5731T4G
Package
DPAK
(Pb−Free)
Shipping
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJD5731/D

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MJD5731
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage (Note 3)
(IC = 30 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 250 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 350 Vdc, VBE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 3)
VCEO(sus)
ICEO
ICES
IEBO
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.3 Adc, VCE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 10 Vdc)
hFE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 10 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
VCE(sat)
VBE(on)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent Gain − Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
fT
hfe
Min
350
30
10
10
25
Max Unit
Vdc
mAdc
0.1
mAdc
0.01
mAdc
0.5
175
Vdc
1.0
Vdc
1.5
MHz
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
200
100 TJ = 150°C
50 25°C
30 - 55°C
20
10
VCE = 10 V
5.0
3.0
2.0
0.02 0.03
0.05 0.1
0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
1.0
2.0
1.4
1.2
1
TJ = 25°C
0.8
0.6
- 55°C
0.4 150°C
0.2 VCE(sat)) @ IC/IB = 5.0
0
0.02 0.03 0.05 0.1 0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
Figure 2. Collector−Emitter Saturation Voltage
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MJD5731
1.4 1.4
1.2 1.2
1.0
VBE(sat) @ IC/IB = 5.0
0.8
0.6
TJ = - 55°C
25°C
150°C
1
VBE(sat) @ IC/IB = 5 V
0.8
VBE(on) @ VCE = 4 V
0.6
0.4 0.4 TJ = 25°C
0.2 0.2 VCE(sat) @ IC/IB = 5 V
0
0.02 0.03
0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base−Emitter Voltage
2.0
0
0.02 0.04 0.06 0.1
0.2
0.4 0.6 1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. “On” Voltages
2
10
5.0
2.0
1.0
0.5 TC = 25°C
1.0 ms
dc
100 ms
500 ms
0.2
0.1 BONDING WIRE LIMIT
0.05 THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.02
0.01
5.0
10 20 30 50 100 200 300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Forward Bias Safe Operating Area
500
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150°C. TJ(pk) may be calculated from the data in Figure 6.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
1
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1
0.1 0.05
0.07 0.02
0.05
0.01
0.03 SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1
23 5
t, TIME (ms)
10
Figure 6. Thermal Response
20 30 50
100 200 300 500 1 k
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TURN-ON PULSE
t1
VBE(off)
Vin
AP­
PROX.
-11 V
t2
MJD5731
0V
t1 7.0 ns
100 t2 < 500 ms
t3 < 15 ns
t3
VCC
Vin
51
APPROX. + 9.0 V
DUTY CYCLE 2.0%
RC
RB
Cjd << Ceb
+ 4.0 V
TURN-OFF PULSE
Figure 7. Switching Time Equivalent Circuit
SCOPE
1.0
0.5 tr
0.3
0.2 td
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
0.1
0.05
0.03
0.02
0.01
0.02 0.03
0.05 0.1 0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
Figure 8. Turn−On Resistive Switching Times
5.0
3.0 ts
2.0
tf
1.0
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
0.5
0.3
0.2
0.1
0.05
0.02 0.03
0.05 0.1
0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
Figure 9. Resistive Turn−Off Switching Times
INPUT
Test Circuit
MJE171
50
RBB1 =
150 W
50
VBB1 = 10 V
RBB2 =
100 W
+
-
VBB2 =
0
VCE MONITOR
TUT
+
-
100 mH
VCC = 20 V
IC MONITOR
RS =
0.1 W
Voltage and Current Waveforms
INPUT
0V
VOLTAGE
- 5 V
0.63 A
COLLECTOR
CURRENT 0 V
VCER
COLLECTOR
VOLTAGE
tw 3 ms
(SEE NOTE 1)
100 ms
10 V
VCE(sat)
Figure 10. Inductive Load Switching
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MJD5731
PACKAGE DIMENSIONS
L3
L4
b2
e
E
b3
4
12 3
DPAK
CASE 369C
ISSUE D
C
A
A
B c2
D
DETAIL A
H
bc
0.005 (0.13) M C
L2
GAUGE
PLANE
H
L
L1
A1
DETAIL A
ROTATED 905 CW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
Z
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
SEATING
PLANE
INCHES
DIM MIN MAX
A 0.086 0.094
A1 0.000 0.005
b 0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
c 0.018 0.024
c2 0.018 0.024
D 0.235 0.245
E 0.250 0.265
e 0.090 BSC
H 0.370 0.410
L 0.055 0.070
L1 0.108 REF
L2 0.020 BSC
L3 0.035 0.050
L4 −−− 0.040
Z 0.155 −−−
MILLIMETERS
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.76 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
−−− 1.01
3.93 −−−
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6
0.063
6.172
0.243
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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MJD5731/D