CJ3400-HF.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 CJ3400-HF 데이타시트 다운로드

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MOSFET
CJ3400-HF (N-Channel )
Reverse Voltage: 30 Volts
Forward Current: 5.8 A
RoHS Device
Halogen Free
Features
- N-Channel Enhancement mode field effect transistor.
- High dense cell design for extermely low RDS(ON)
- Exceptional on-resistance and maximum
DC current capability.
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: solderable per MIL-STD-750,
method 2026.
Circuit diagram
D
Comchip
SMD Diode Specialist
SOT-23
0.055(1.40)
0.047(1.20)
0.118(3.00)
0.110(2.80)
3
12
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
G
S
Maximum Ratings ( Ta=25 °C unless otherwise noted )
Parameter
Symbol
Drain-source voltage
Gate-source voltage
VDS
VGS
Continuous drain current
Drain current-pulsed (note 1)
Power dissipation
Thermal resistance from Junction to ambient (note 2)
Junction temperature
Storage temperature
ID
IDM
PD
RΘJA
TJ
TSTG
Value
30
±12
5.8
30
350
357
150
-55 to +150
Units
V
V
A
A
mW
°C/W
°C
°C
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Comchip Technology CO., LTD.
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MOSFET
Electrical Characteristics ( Ta=25 °C unless otherwise noted )
Parameter
Conditions
Symbol
Off Characteristics
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-Source leakage current
VGS=0V, ID=250μA
VDS=24V, VGS=0V
VGS=±12V , VDS=0V
V(BR)DSS
IDSS
IGSS
On Characteristics
Static drain-source on-resistance
(note 3)
Forward transconductance
Gate threshold voltage
VGS=10V, ID=5.8A
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VDS=5V, ID=5A
VDS=VGS, ID=250μA
RDS(ON)
gFS
VGS(th)
Dynamic Characteristics (note 3,4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
VDS=15V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
Switching Characteristics (note 3,4)
Ciss
Coss
Crss
Rg
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off Fall time
VGS=10V, VDS=15V,
RL=2.7Ω, RGEN=3Ω
td(on)
tr
td(off)
tf
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3)
IS=1A, VGS=0V
VSD
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface mounted on FR4 Board, t < 5sec.
3. Pulse test; Pulse width 300µs, Duty cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Min.
30
8
0.7
Comchip
SMD Diode Specialist
Typ. Max. Unit
V
1
±100
V
μA
nA
35
40 mΩ
52
S
1.4 V
1050
99 pF
77
3.6 Ω
5
7
ns
40
6
1V
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Comchip Technology CO., LTD.
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MOSFET
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (CJ3400-HF)
Fig.1- Output Characteristics
24
VGS=7V-3V
Ta=25°C
Pulsed
20
VGS=2.5V
18
12
VGS=2V
8
4
0
02
VGS=1.5V
4 6 8 10
Drain To Soruce Voltage, VDS (A)
200
Ta=25°C
Pulsed
Fig.3 - RDS(ON) — ID
150
100
V =2.5V
GS
50
0
0
10
V =4.5V
GS
V =10V
GS
5
10 15
20
Drain Current,ID (A)
Fig.5 - IS — VSD
25
Fig.2- Transfer Characteristics
5
Ta=25°C
Pulsed
4
3
2
1
0
0
500
400
0.5 1.0
1.5 2.0
Gate To Source Voltage,VGS (V)
2.5
Fig.4- RDS(ON) — VGS
Ta=25°C
Pulsed
300
200
ID=5A
100
0
0 2 4 6 8 10
Gate to Source Voltage,VGS (V)
1
0.1
0.01
1E-3
0.0
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0.3 0.6 0.9 1.2
Source To Drain Voltage,VSD (V)
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Comchip Technology CO., LTD.
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MOSFET
Marking Code
Part Number Marking Code
CJ3400-HF
R0
Comchip
SMD Diode Specialist
3
XX
12
xx = Product type marking code
Suggested PAD Layout
SIZE
A
B
C
D
SOT-23
(mm)
0.80
(inch)
0.031
1.90 0.075
2.02 0.080
2.82 0.111
A
B
CD
Standard Packaging
Case Type
SOT-23
Qty Per Reel
(Pcs)
3,000
Reel Size
(inch)
7
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Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
REV:A
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