HR5459-25C.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 HR5459-25C 데이타시트 다운로드

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Preliminary
GaN Hybrid Power Amplifier HR5459-25C
Product Features
• GaN on SiC HEMT
• Surface Mount Hybrid Type
• Compact Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radar Systems
• Pulse amplifier application
Package Type : NP-36
Description
The HR5459-25C is designed for Radar system application frequencies from 5.4GHz to 5.9GHz and GaN HEMT technology has been
used that performs high breakdown voltage, wide bandwidth and high efficiency. HR5459-25C has been designed 2 stages to have
higher Gain at the wide frequency range of 5.4GHz ~5.9GHz. GaN HEMT technology has been used to every amplifier in it for better
reliability. Since it is high efficiency amplifier, it can perform at max 10% duty cycle and 50us of pulse width.
Electrical Specifications @ Vds =28V, Ta=25
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
5400
-
Power Gain
- 15
Power Flatness dB -
-
Input Return Loss
- -6
Pout @ Psat
W 20
25
Harmonics 1 to N
dBc
-
-25
Pulse Droop
dB -
0.5
Pulse
Response
Fall Time
Rise Time
ns
ns
-
-
-
-
Drain Efficiency % -
40
Ids
A-
2.3
Supply Voltage
V -3.5
V-
-3.3
28
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Test condition = 50us (pulse width), 10%(duty cycle), Pin=29dBm
Note
HR Series have internal DC blocking capacitors at the RF input and output ports
MAX
5900
-
1
-
-
-
-
200
200
-
-3.0
-
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 10mA
Idq2 = 10mA
-
-
-
-
Pout @ Peak
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
TYP
2
20.5 x 12.5 x 4.8
REMARK
-
-
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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Preliminary
GaN Hybrid Power Amplifier HR5459-25C
Absolute Maximum Ratings
PARAMETER
UNIT
Gate-Source Voltage
V
Drain-Source Voltage
Gate Current
Operating Junction Temperature
Operating Case Temperature
Storage Temperature
V
mA
°C
°C
°C
Operating Voltages
PARAMETER
Drain Voltage
Gate Voltage (on-stage)
Gate Voltage (on-stage)
Gate Voltage (off-stage)
Gate Voltage (off-stage)
UNIT
V
V
V
V
V
Power Supply
PARAMETER
Drain-Source current
Gate-Source Current (on-stage)
Gate-Source Current (off-stage)
UNIT
A
mA
mA
Block Diagram
MIN
-
-
-
-
-
MIN
-
-
-
RATING
-10 ~ 0
84
9.3
225
-20 ~ 85
-40 ~ 100
TYP
28
Vgs1@Idq1
Vgs2@Idq2
-8
-8
TYP
-
-
-
SYMBOL
Vgs1
Vgs2
Vds
Ig
TJ
TC
TSTG
MAX
-
-2
-2
-
-
SYMBOL
Vds
Vgs 1
Vgs 2
Vgs 1
Vgs 2
MAX
3.5
20
0.04
SYMBOL
Ids
Igs
Igs
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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Preliminary
GaN Hybrid Power Amplifier
Application Circuit
HR5459-25C
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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Preliminary
GaN Hybrid Power Amplifier HR5459-25C
Package Dimensions (Type: NP-36)
* Unit: mm[inch] | Tolerance: ±0.15[.006]
Top View
Pin No
1
2
3
Side View
Function
Vds1
RF input
Vgs1
Pin No
6
5
4
Bottom View
Function
Vds2
RF output
Vgs2
Recommended Pattern
* Mounting Configuration Notes
1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat.
2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws
be added near the heatsink to mount the board
3. In designing the necessary RF trace, width will depend upon the PCB material and construction.
4. Use 1 oz. Copper minimum thickness for the heatsink.
5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink
6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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Preliminary
GaN Hybrid Power Amplifier HR5459-25C
Precautions
This product is a Gallium Nitride Transistor.
The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are
applied in accordance to the Sequence during Turn-On and Turn-Off.
The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and
negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier.
The required sequence for power supply is as follows.
During Turn-On
1. Connect GND.
2. Apply Vgs1 and Vgs2.
3. Apply Vds.
4. Apply the RF Power.
During Turn-Off
1. Turn off RF power.
2. Turn off Vds, and then, turn off the Vgs1 and Vgs2.
3. Remove all connections.
Turn On
Turn Off
- Sequence Timing Diagram -
Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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