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a
CMOS Single-Supply Rail-to-Rail
Input/Output Operational Amplifier
OP150/OP250/OP450
FEATURES
PIN CONFIGURATIONS
Single-Supply Operation: 2.7 V to 6 V
High Output Current: ؎250 mA
Low Supply Current: 600 A/Amp
Wide Bandwidth: 4 MHz
8-Lead Narrow-Body SO
(S Suffix)
5-Lead SOT23-5
(RT Suffix)
Slew Rate: 6.5 V/s
No Phase Reversal
NC NC
OUT
V+
Low Input Currents
Unity Gain Stable
APPLICATIONS
Battery Powered Instrumentation
Multi Media Audio
Medical
ORemote Sensors
ASIC Input or Output Amplifier
BAutomotive
Headphone Driver
SOLGENERAL DESCRIPTION
EThe OP150, OP250 and OP450 are single, dual and quad
TCMOS single-supply, 4 MHz bandwidth amplifiers featuring
Erail-to-rail inputs and outputs. All are guaranteed to operate from
–IN V+
OP150
+IN OUT
V– NC
8-Lead Narrow-Body SO
(S Suffix)
OUT A
–IN A
+IN A
V–
OP250
V+
OUT B
–IN B
+IN B
14-Lead Epoxy DIP
(P Suffix)
V–
+IN –IN
OP150
8 Lead Epoxy DIP
(P Suffix)
OUT A 1
–IN A 2
+IN A 3
V– 4
OP250 8 V+
7 OUT B
6 –IN B
5 +IN B
14-Lead SO
(S Suffix)
a 3 volt single supply as well as a +5 volt supply.
The OP150 family of amplifiers have very low input bias cur-
rents. The outputs are capable of driving 250 mA loads and are
stable with capacitive loads as high as 500 pF.
Applications for these amplifiers include portable medical
equipment, safety and security, and interface for transducers
with high output impedances.
Supply current is only 600 µA per amplifier.
OUT A 1
–IN A 2
+IN A 3
V+ 4
+IN B 5
–IN B 6
OUT B 7
OP450
14 OUT D
13 –IN D
12 +IN D
11 V–
10 +IN C
9 –IN C
8 OUT C
OUT A
–IN A
+IN A
V+
+IN B
–IN B
OUT B
OP450
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
The ability to swing rail-to-rail at both the input and output en-
ables designers to build multistage filters in single-supply sys-
tems and maintain high signal-to-noise ratios.
The OP150/OP250/OP450 are specified over the extended in-
dustrial (-40°C to +125°C) temperature range. The OP150
single amplifiers are available in 8-pin SO surface mount and
the 5-pin SOT23-5 packages. The OP250 dual is available in 8-
pin plastic DIPs and SO surface mount packages. The OP450
quad is available in 14-pin DIPs, TSSOP and narrow 14-pin SO
packages. Consult factory for TSSOP availability.
14-Lead
TSSOP
(RU Suffix)
OP450
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
PRELIMINARY TECHNICAL DATA

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OP150/OP250/OP450–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = +3.0 V, VCM = 0.05 V, VO = 1.4 V, TA = +25؇C, unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage OP150
VOS
–40°C TA +125°C
5 mV
mV
Offset Voltage OP250/OP450
VOS
–40°C TA +125°C
5 mV
mV
Input Bias Current
IB
–40°C TA +125°C
10 60 pA
pA
Input Offset Current
IOS
–40°C TA +125°C
25 pA
pA
Input Voltage Range
0 3V
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Large Signal Voltage Gain
Large Signal Voltage Gain
OOffset Voltage Drift
Bias Current Drift
BOffset Current Drift
CMRR
AVO
AVO
AVO
VOS/T
IB/T
IOS/T
VCM = 0 V to 3 V
–40°C TA +125°C
RL = 10 k, VO = 0.3 V to 2.7 V
–40°C TA +125°C
RL = 2 k, VO = 0.3 V to 2.7 V
RL = 1 k, VO = 0.3 V to 2.7 V
60
40
16
10
dB
dB
V/mV
V/mV
V/mV
V/mV
µV/°C
pA/°C
pA/°C
SOUTPUT CHARACTERISTICS
OOutput Voltage High
VOH
LETEOutput Voltage Low
VOL
IL = 100 µA
–40°C to +125°C
IL = 10 mA
–40°C to +125°C
IL = 100 µA
–40°C to +125°C
IL = 10 mA
2.95 2.99
V
V
2.95 V
V
2 10 mV
mV
30 55 mV
–40°C to +125°C
mV
Output Current
IOUT
–40°C to +125°C
± 250
mA
mA
Open Loop Impedance
ZOUT
f = 1 MHz, AV = 1
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
PSRR
ISY
VS = 2.7 V to 6 V
–40°C TA +125°C
VO = 0 V
–40°C TA +125°C
70 dB
68 dB
500 600 µA
650 µA
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Gain Bandwidth Product
Phase Margin
Channel Separation
SR
tS
GBP
Øo
CS
RL =10 k
To 0.01%
f = 1 kHz, RL =10 k
2.7 V/µs
µs
2 MHz
75 Degrees
dB
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
µV p-p
55 nV/Hz
pA/Hz
Specifications subject to change without notice.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
PRELIMINARY TECHNICAL DATA
–2–
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OP150/OP250/OP450
ELECTRICAL CHARACTERISTICS (@ VS = +5.0 V, VCM = 0.05 V, VO = 1.4 V, TA = +25؇C, unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage OP150
VOS
–40°C TA +125°C
5 mV
mV
Offset Voltage OP250/OP450
VOS
–40°C TA +125°C
5 mV
mV
Input Bias Current
IB
–40°C TA +125°C
30 50 pA
60 pA
Input Offset Current
IOS
0.1 8 pA
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Large Signal Voltage Gain
OLarge Signal Voltage Gain
BOffset Voltage Drift
Bias Current Drift
SOffset Current Drift
OOUTPUT CHARACTERISTICS
Output Voltage High
CMRR
AVO
AVO
AVO
VOS/T
IB/T
IOS/T
VOH
LETEOutput Voltage Low
VOL
–40°C TA +125°C
VCM = 0 V to 5 V
–40°C TA +125°C
RL = 10 k, VO = 0.3 V to 4.7 V
–40°C TA +125°C
RL = 2 k, VO = 0.3 V to 2.7 V
RL = 1 k, VO = 0.3 V to 2.7 V
–40°C TA +125°C
IL = 100 µA
–40°C to +125°C
IL = 10 mA
–40°C to +125°C
IL = 100 µA
0
60
16 pA
5V
dB
dB
40 V/mV
V/mV
16 V/mV
10 V/mV
1.5 µV/°C
100 pA/°C
20 pA/°C
4.99 V
V
4.95 V
V
2 mV
–40°C to +125°C
mV
IL = 10 mA
–40°C to +125°C
30 mV
mV
Output Current
IOUT
–40°C to +125°C
± 250
mA
mA
Open Loop Impedance
ZOUT
f = 1 MHz, AV = 1
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
PSRR
ISY
VS = 2.7 V to 6 V
–40°C TA +125°C
VO = 0 V
–40°C TA +125°C
75 dB
70 dB
µA
550 650 µA
DYNAMIC PERFORMANCE
Slew Rate
Full Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
Channel Separation
SR
BWp
tS
GBP
Øo
CS
RL =10 k
1% Distortion
To 0.01%
f = 1 kHz, RL =10 k
6.5 V/µs
kHz
µs
4 MHz
75 Degrees
dB
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Current Noise Density
en p-p
en
en
in
0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
µV p-p
55 nV/Hz
35 nV/Hz
pA/Hz
Specifications subject to change without notice.
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
REV. 0
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OP150/OP250/OP450
WAFER TEST LIMITS (@ VS = +5.0 V, VCM = 0 V, TA = +25؇C unless otherwise noted.)
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
VOS
± 10 mV max
Input Bias Current
IB
50 pA max
Input Offset Current
IOS
10 pA max
Input Voltage Range
VCM
V– to V+
V min
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 10 V
60
dB min
Power Supply Rejection Ratio
PSRR
V = +2.7 V to +7 V
70
dB min
Large Signal Voltage Gain
AVO
RL = 10 k
V/mV min
Output Voltage High
VOH
RL = 2 kto GND
2.9
V min
Output Voltage Low
VOL
RL = 2 kto V+
55
mV max
Supply Current/Amplifier
ISY
VO = 0 V, RL =
650
µA max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
OABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7 V
BInput Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to VS
SDifferential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Output Short-Circuit Duration to GND2 . . . . . . . . . Indefinite
OStorage Temperature Range
P, S, RT, RU Package . . . . . . . . . . . . . . . . –65°C to +150°C
LOperating Temperature Range
EOP150/OP250/OP450G . . . . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
TP, S, RT, RU Package . . . . . . . . . . . . . . . . –65°C to +150°C
ELead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C
Model
OP150GS
OP150GRT
OP150GBC
OP250GP
OP250GS
OP250GRU
OP250GBC
OP450GP
ORDERING GUIDE
Temperature
Range
–40°C to +125°C
–40°C to +125°C
+25°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
+25°C
–40°C to +125°C
Package Option
8-Pin SOIC
5-Pin SOT
DICE
8-Pin Plastic DIP
8-Pin SOIC
8-Pin TSSOP
DICE
14-Pin Plastic DIP
Package Type
θJA3
θJC
Units
OP450GS
OP450GRU
–40°C to +125°C 14-Pin SOIC
–40°C to +125°C 14-Pin TSSOP
5-Pin SOT (RT)
325
°C/W OP450GBC +25°C
DICE
8-Pin Plastic DIP (P)
103
43 °C/W
8-Pin SOIC (S)
158 43 °C/W
8-Pin TSSOP (RU) 240 43 °C/W
14-Pin Plastic DIP (P)
76
33 °C/W
14-Pin SOIC (S)
120 36 °C/W
14-Pin TSSOP( RU)
180
35 °C/W
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2θJA is specified for the worst case conditions, i.e., θJA is specified for device in
socket for P-DIP packages; θJA is specified for device soldered in circuit board
for SOIC package.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP150/OP250/OP450 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, p roper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
PRELIMINARY TECHNICAL DATA
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OP150/OP250/OP450
DICE CHARACTERISTICS
OP150 Die Size 0.00 × 0.00 Inch, 00 Sq. Mils
Substrate (Die Backside) Is Connected to V–
Transistor Count, 00.
OP250 Die Size 0.044 × 0.045 Inch, 1,980 Sq. Mils
Substrate (Die Backside) Is Connected to V–
Transistor Count, 0.
OP450 Die Size 0.052 × 0.058 Inch, 3,016 Sq. Mils
Substrate (Die Backside) Is Connected to V–
Transistor Count, 127.
2.5
VOL
VOH
2.0
1.5
1.0
OB0.5
S0
O0 20 40 60 80 100 120 140 160 180 200
R LOAD
LETEFigure 1. ±VOUT vs. RLOAD
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Analog Devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing.
REV. 0
–5– PRELIMINARY TECHNICAL DATA