CJ3401.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 CJ3401 데이타시트 다운로드

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE
z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability
MARKING: R1
D
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings ( Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
TJ
TSTG
G
S
Value
-30
±12
-4.2
350
357
150
-55~+150
Unit
V
V
A
mW
/W
A,Dec,2010

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Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
V(BR)DSS
IDSS
IGSS
VGS = 0V, ID =-250µA
VDS =-24V,VGS = 0V
VGS =±12V, VDS = 0V
On characteristics
Drain-source on-resistance
(note 1)
RDS(on)
Forward tranconductance (note 1)
Gate threshold voltage
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
gFS
VGS(th)
Ciss
Coss
Crss
VGS =-10V, ID =-4.2A
VGS =-4.5V, ID =-4A
VGS =-2.5V,ID=-1A
VDS =-5V, ID =-5A
VDS =VGS, ID =-250µA
VDS =-15V,VGS =0V,f =1MHz
Switching characteristics (note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall Time
td(on)
tr
td(off)
tf
VGS=-10V,VDS=-15V,
RL=3.6,RGEN=6
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 1)
VSD IS=-1A,VGS=0V
Note :
1. Pulse Test : Pulse width300µs, duty cycle2%.
2. These parameters have no way to verify.
Min Typ Max Units
-30 V
-1 µA
±100 nA
65 m
75 m
90 m
7S
-0.7 -1.3 V
954 pF
115 pF
77 pF
6.3 ns
3.2 ns
38.2 ns
12 ns
-1 V
A,Dec,2010

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Typical Characteristics
CJ3401
-25
T =25
a
Pulsed
-20
Output Characteristics
V =-10V
GS
V =-4.5V
GS
-15
V =-3.0V
GS
V =-2.5V
GS
-10
V =-2.0V
GS
-5
-0
-0 -1 -2 -3 -4 -5
DRAIN TO SOURCE VOLTAGE V (V)
DS
120
T =25
a
Pulsed
100
80
60
40
R
DS(ON)
——
I
D
V =-2.5V
GS
V =-4.5V
GS
V =-10V
GS
20
-0 -2 -4 -6 -8 -10
DRAIN CURRENT I (A)
D
-10
T =25
a
Pulsed
-1
I —— V
S SD
-0.1
-0.01
-1E-3
-1E-4
-1E-5
-0.0
-0.3 -0.6 -0.9
SOURCE TO DRAIN VOLTAGE V (V)
SD
-1.2
-5
T =25
a
Pulsed
-4
Transfer Characteristics
-3
-2
-1
-0
-0.0
-0.5 -1.0 -1.5 -2.0
GATE TO SOURCE VOLTAGE V (V)
GS
-2.5
R —— V
DS(ON)
GS
100
T =25
a
Pulsed
80
60
I =-2A
D
40
20
-0 -2 -4 -6 -8 -10
GATE TO SOURCE VOLTAGE V (V)
GS
A,Dec,2010