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STL7N6F7
N-channel 60 V, 21 mΩ typ., 7 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet - production data
1
2
3
1
2
3
6
5
4
PowerFLAT™ 2x2
Figure 1: Internal schematic diagram
1(D) 2(D) 3(G)
DS
Features
Order code
STL7N6F7
VDS
60 V
RDS(on) max
25 mΩ
ID
7A
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6(D) 5(D) 4(S)
Order code
STL7N6F7
Bottom view
Marking
ST7N
AM11269v1
Table 1: Device summary
Package
PowerFLAT™ 2x2
Packing
Tape and reel
April 2017
DocID028257 Rev 3
This is information on a product in full production.
1/13
www.st.com

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Contents
Contents
STL7N6F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 PowerFLAT 2x2 package information ............................................. 10
5 Revision history ............................................................................ 12
2/13 DocID028257 Rev 3

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STL7N6F7
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID
ID
IDM(1)
PTOT
TJ
Tstg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tpcb = 25 °C
Drain current (continuous) at Tpcb = 100 °C
Drain current (pulsed)
Total dissipation at Tpcb = 25 °C
Operating junction temperature range
Storage temperature range
Notes:
(1)Pulse width limited by safe operating area.
Symbol
Rthj-pcb(1)
Table 3: Thermal data
Parameter
Thermal resistance junction-pcb
Notes:
(1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.
Electrical ratings
Value
60
± 20
7
4.5
28
2.4
-55 to 150
Unit
V
V
A
A
A
W
°C
Value
52
Unit
°C/W
DocID028257 Rev 3
3/13

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Electrical characteristics
STL7N6F7
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0 V
Zero gate voltage
IDSS drain current
VGS = 0 V , VDS = 60 V
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current
Gate threshold voltage
Static drain-source
on-resistance
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 3.5A
Min. Typ. Max. Unit
60 V
1 µA
100 nA
2 4V
21 25
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = 30 V, f = 1 MHz,
VGS = 0 V
VDD = 30 V, ID= 7 A
VGS = 0 to 10 V
(see Figure 14: "Test circuit
for gate charge behavior")
Min. Typ. Max. Unit
- 420 -
- 215 -
pF
pF
- 16
- pF
- 8 - nC
- 2.3
- nC
- 2.1 - nC
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf Fall time
Table 6: Switching times
Test conditions
VDD = 30 V, ID = 3.5A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Test circuit
for resistive load switching
times" and Figure 18:
"Switching time waveform")
Min. Typ. Max. Unit
- 7.85 -
ns
- 3.25 -
ns
- 12.1 -
ns
- 3.95 -
ns
4/13 DocID028257 Rev 3

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STL7N6F7
Symbol
VSD(1)
trr
Qrr
IRRM
Table 7: Source-drain diode
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, VGS = 0 V
ID = 7 A, di/dt = 100 A/µs
VDD = 48 V
(see Figure 15: "Test circuit
for inductive load switching
and diode recovery times"
- 1.2 V
- 17.1
ns
- 6.67
nC
- 0.8
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID028257 Rev 3
5/13