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2N6107 2N6109 2N6111 PNP
2N6288 2N6290 2N6292 NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6107, 2N6288
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose power amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
2N6111 2N6109 2N6107
2N6288 2N6290 2N6292
40 60 80
30 50 70
5.0
7.0
10
3.0
40
-65 to +150
3.13
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=20V (2N6111, 2N6288)
ICEO
VCE=40V (2N6109, 2N6290)
ICEO
VCE=60V (2N6107, 2N6292)
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N6111, 2N6288)
30
BVCEO
IC=100mA (2N6109, 2N6290)
50
BVCEO
IC=100mA (2N6107, 2N6292)
70
VCE(SAT) IC=7.0A, IB=3.0A
VBE(ON) VCE=4.0V, IC=7.0A
hFE
VCE=4.0V, IC=2.0A (2N6107, 2N6292)
30
hFE
VCE=4.0V, IC=2.5A (2N6109, 2N6290)
30
hFE
VCE=4.0V, IC=3.0A (2N6111, 2N6288)
30
hFE VCE=4.0V, IC=7.0A
2.3
hfe VCE=4.0V, IC=0.5A, f=50kHz
20
fT VCE=4.0V, IC=0.5A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=1.0MHz
MAX
100
2.0
1.0
1.0
1.0
1.0
3.5
3.0
150
150
150
250
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
μA
mA
mA
mA
mA
mA
V
V
V
V
V
MHz
pF
R1 (10-April 2013)

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2N6107 2N6109 2N6111 PNP
2N6288 2N6290 2N6292 NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (10-April 2013)

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