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CYStech Electronics Corp.
Spec. No. : C912F3
Issued Date : 2016.10.05
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE3D5N06F3 BVDSS
ID @VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=30A
RDSON(TYP) @ VGS=7V, ID=20A
60V
80A
3.6mΩ
3.8mΩ
Features
Simple Drive Requirement
Fast Switching Characteristic
RoHS compliant package
Symbol
MTE3D5N06F3
Outline
TO-263
GGate
DDrain
SSource
G DS
Ordering Information
Device
Package
Shipping
MTE3D5N06F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE3D5N06F3
CYStek Product Specification

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CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C(silicon limit)
Continuous Drain Current @ TC=100°C(silicon limit)
Continuous Drain Current @ TC=25°C(package limit) (Note 1)
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Avalanche Current
Avalanche Energy @ L=100μH, ID=30A, RG=25Ω
(Note 2)
(Note 2)
(Note 3)
(Note 2)
Power Dissipation
TC=25°C
TC=100°C
(Note 1)
(Note 1)
Power Dissipation
TA=25°C
TA=70°C
(Note 2)
(Note 2)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
IDSM
IAS
EAS
PD
PDSM
Tj, Tstg
Spec. No. : C912F3
Issued Date : 2016.10.05
Revised Date :
Page No. : 2/9
Limits
60
±30
143
101
80
480
15.4
12.3
30
45
188
94
2
1.3
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, (Note 2)
Symbol
Rth,j-c
Rth,j-a
Value
0.8
62.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3.Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to
keep initial TJ=25°C.
4.The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTE3D5N06F3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C912F3
Issued Date : 2016.10.05
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
60
2.0
-
-
-
-
-
-
-
-
-
4.0
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
46 -
S VDS =5V, ID=20A
-
±100
nA VGS=±30V
-
-
1
25
μA
VDS =60V, VGS =0V
VDS =60V, VGS =0V, Tj=125°C
3.6
3.8
4.8
5.0
mΩ
VGS =10V, ID=30A
VGS =7V, ID=20A
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
- 68.3 -
- 11 -
- 28 -
- 24 -
- 25.2 -
- 56.2 -
- 17.8 -
- 2919 -
- 585 -
- 270 -
nC ID=30A, VDS=30V, VGS=10V
ns VDS=30V, ID=30A, VGS=10V, RG=1Ω
pF VGS=0V, VDS=25V, f=1MHz
Rg - 1.1 - Ω f=1MHz
Source-Drain Diode
*IS
*ISM
-
-
*VSD
*trr
-
-
*Qrr -
- 80
- 480
0.81 1.2
28.7 -
26.2 -
A
V IS=30A, VGS=0V
ns
nC
IF=30A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTE3D5N06F3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C912F3
Issued Date : 2016.10.05
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
300
10V
250
9V
8V
200
150
100
50
0
0
7V
6.5V
6V
5.5V
5V
VGS=4.5V
1 23 4
VDS, Drain-Source Voltage(V)
5
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
1
VGS=7V
10V
0.8
Tj=25°C
10
0.6
Tj=150°C
0.4
1
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80 ID=30A
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=30A
2
1.6
1.2
0.8
0.4 RDS(ON)@Tj=25°C :3.6mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTE3D5N06F3
CYStek Product Specification

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CYStech Electronics Corp.
Spec. No. : C912F3
Issued Date : 2016.10.05
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
100
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=30V
8 VDS=12V
6
4 VDS=48V
2
ID=30A
0
0 10 20 30 40 50 60 70 80
Total Gate Charge---Qg(nC)
1000
100
RDS(ON)
Limit
Maximum Safe Operating Area
10μs
100μs
10
1
TC=25°C, Tj=175°, VGS=10V
RθJC=0.8°C/W, Single Pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
160
140 silicon limit
120
100
80
60
40 package limit
20 VGS=10V, RθJC=0.8°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE3D5N06F3
CYStek Product Specification