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BTW 69 (N)
....FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 69 Serie :
INSULATED VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
SCR
DESCRIPTION
The BTW 69 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
K
A
G
TOP 3
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
BTW 69 Tc=70°C
BTW 69 N Tc=75°C
Average on-state current (180° BTW 69 Tc=70°C
conduction angle,single phase circuit) BTW 69 N Tc=75°C
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp=8.3 ms
tp=10 ms
I2t value
tp=10 ms
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Value
50
55
32
35
525
500
1250
100
- 40 to + 150
- 40 to + 125
230
Unit
A
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
BTW 69
200 400
200 400
BTW 69 / BTW 69 N
600 800 1000 1200
600 800 1000 1200
Unit
V
March 1995
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BTW 69 (N)
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Rth (j-c) DC Junction to case for DC
Parameter
BTW 69
BTW 69 N
Value
50
0.9
0.8
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IFGM = 8A (tp = 20 µs) VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
tgt
IL
IH
VTM
IDRM
IRRM
dV/dt
tq
VD=12V (DC) RL=33
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
VD=VDRM IG = 200mA
dIG/dt = 1.5A/µs
IG= 1.2 IGT
IT= 500mA gate open
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
Tj=25°C
Tj=25°C
BTW 69 ITM= 100A
BTW 69 N ITM= 110A
VDRM Rated
VRRM Rated
tp= 380µs
Tj=25°C
Tj=25°C
Tj= 125°C
Linear slope up to
VD=67%VDRM
gate open
VDRM800V Tj= 125°C
VDRM 1000V
VD=67%VDRM ITM= 110A VR= 75V
dITM/dt=30 A/µs dVD/dt= 20V/µs
Tj= 125°C
MAX
MAX
MIN
TYP
TYP
MAX
MAX
MAX
MIN
TYP
Value
BTW 69 BTW 69 N
80
1.5
0.2
2
Unit
mA
V
V
µs
50
150
1.9 2.0
mA
mA
V
0.02
6
500
250
mA
V/µs
100 µs
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Package
BTW 69
(Insulated)
BTW 69 N
(Uninsulated)
IT(RMS)
A
50
55
VDRM / VRRM
V
200
400
600
800
1000
1200
600
800
1000
1200
BTW 69 (N)
Sensitivity Specification
BTW
X
X
X
X
X
X
X
X
X
X
Fig.1 : Maximum average power dissipation versus
average on-state current (BTW 69).
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTW 69).
Fig.3 : Maximum average power dissipation versus
average on-state current (BTW 69 N).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTW 69 N).
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BTW 69 (N)
Fig.5 : Average on-state current versus case
temperature (BTW 69).
Fig.6 : Average on-state current versus case
temperature (BTW 69 N).
Fig.7 : Relative variation of thermal impedance versus
pulse duration.
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
Zth/Rth
1.00
0.10
Zth( j-c)
Zt h( j-a)
0.01
1E-3
1E-2
1E-1
1E+0 1E+1
tp( s)
1E+2 1E+3
Fig.9 : Non repetitive surge peak on-state current
versus number of cycles.
Fig.10 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t 10 ms, and
corresponding value of I2t.
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Fig11 : On-state characteristics (maximum values).
BTW 69 (N)
PACKAGE MECHANICAL DATA
TOP 3 Plastic
A
R 4.6
I
H
J
G
B
D
P
NN
C
L
M
REF.
A
B
C
D
G
H
I
J
L
M
N
P
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
15.10 15.50 0.594 0.611
20.70 21.10 0.814 0.831
14.30 15.60 0.561 0.615
16.10 16.50 0.632 0.650
3.40
- 0.133 -
4.40 4.60 0.173 0.182
4.08 4.17 0.161 0.164
1.45 1.55 0.057 0.062
0.50 0.70 0.019 0.028
2.70 2.90 0.106 0.115
5.40 5.65 0.212 0.223
1.20 1.40 0.047 0.056
Cooling method : C
Marking : type number
Weight : 4.7 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
© 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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