60N06.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 60N06 데이타시트 다운로드

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60N06
·DESCRIPTION
·Drain Current ID= 60A@ TC=25
·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·APPLICATIONS
·General purpose power amplifier
High current,high speed switching
Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60 V
VGS
ID
ID(puls)
Gate-Source Voltage
Drain Current-continuous@ TC=25
Drain Current-continuous@ TC=100
Pulse Drain Current
±20
60
39
120
V
A
A
Ptot Total Dissipation@TC=25
120 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.25 /W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
60N06
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD Diode Forward On-Voltage
IS=60A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID=30A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
MIN TYPE MAX UNIT
60 V
2.0 4.0 V
1.6 V
18 mΩ
±100 nA
1 µA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark