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TECHNICAL NOTE
HIGH GRADE Specification HIGH RELIABILITY series
SPI BUS Serial EEPROMs
Supply voltage 2.5V~5.5V
Operating temperature -40°C ~ +125°C type
☆☆
BR25H010-W, BR25H020-W, BR25H040-W, BR25H080-W, BR25H160-W, BR25H320-W
: Under development
Description
□□□BR25H
-W series is a serial EEPROM of SPI BUS interface method.
Features
High speed clock action up to 5MHz (Max.)
Wait function by HOLDB terminal.
Part or whole of memory arrays settable as read only memory area by program.
2.55.5V single power source action most suitable for battery use.
Page write mode useful for initial value write at factory shipment.
Highly reliable connection by Au pad and Au wire.
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
Auto erase and auto end function at data rewrite.
Low current consumption
At write action (5V) : 1.5mA (Typ.)
Page write
Number of
pages
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V) : 0.1μA (Typ.)
Address auto increment function at read action
Product
number
Write mistake prevention function
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage.
SOP8, SOP-J8 Package
Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
Data kept for 40 years.
Data rewrite up to 1,000,000times.
16 Byte
BR25H010-W
BR25H020-W
BR25H040-W
32 Byte
BR25H080-W
BR25H160-W
BR25H320-W
BR25H series
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
32Kbit
Bit format
128×8
256×8
512×8
1K×8
2K×8
4Kx8
Type
BR25H010-W
BR25H020-W
BR25H040-W
BR25H080-W
BR25H160-W
BR25H320-W
Power source
voltage
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
2.5~5.5V
SOP8
SOP-J8
Ver A. Aug. 2007

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Absolute maximum ratings (Ta=25°C)
Parameter
Impressed voltage
Permissible
dissipation
Storage
temperature range
Operating
temperature range
Terminal voltage
Symbol
Vcc
Pd
Tstg
Topr
Limits
-0.3~+6.5
450(SOP8) *1
450(SOP-J8) *2
-65~150
-40~125
-0.3~Vcc+0.3
Unit
V
mW
°C
°C
V
When using at Ta=25or higher, 3.6mW (*1,*2) to be reduced per 1
Memory cell characteristics (Vcc=2.5V5.5V)
Parameter
Number of data
rewrite times ж1
Data hold years
ж1
Limits
Min Typ.
1,000,000 -
500,000
-
300,000
-
40 -
20 -
Max
-
-
-
-
-
Unit Condition
Times
Times
Times
Ta85
Ta105
Ta125
Years Ta25°C
Years Ta85°C
ж1:Not 100% TESTED
Recommended action conditions
Parameter
Power source voltage
Input voltage
Symbol
Vcc
Vin
Limits
2.5~5.5
0~Vcc
Unit
V
Input / output capacity (Ta=25°C, frequency=5MHz)
Parameter
Symbol Conditions Min. Max. Unit
Input capacity ж1
Output capacity ж1
CIN
COUT
VIN=GND
VOUT=GND
8
8 pF
*1: Not 100% TESTED
Electrical characteristics (Unless otherwise specified, Ta=-40~+125°C, Vcc=2.5~5.5V)
Parameter
Symbol
Limits
Min. Typ. Max.
Unit
Conditions
“H” input voltage
VIH
0.7x
Vcc
Vcc
+0.3
V 2.5Vcc5.5V
“L” output voltage
VIL
-0.3 –
0.3x
Vcc
V
2.5Vcc5.5V
“L” output voltage
VOL 0 – 0.4 V IOL=2.1mA
“H” output voltage
VOH
Vcc
-0.5
Vcc
V IOH=-0.4mA
Input leak current
ILI -10 – 10 μA VIN=0~Vcc
Output lead current
ILO -10 – 10 μA VOUT=0~Vcc, CSB=Vcc
Vcc=2.5V,fSCK=5MHz, tE/W=5ms
ICC1
2.0
mA
VIH/VIL=0.9Vcc/0.1Vcc,
Byte write, Page write
Current consumption at write
Write status regisuter
action
Vcc=5.5V,fSCK=5MHz, tE/W=5ms
ICC2
3.0
mA
VIH/VIL=0.9Vcc/0.1Vcc
Byte write, Page write
Write status register
Vcc=2.5V,fSCK=5MHz
ICC3 – – 1.5 mA VIH/VIL=0.9Vcc/0.1Vcc,
Current consumption at read
Read, Read status register
action
Vcc=5.5V,fSCK=5MHz
ICC4 – – 2.0 mA VIH/VIL=0.9Vcc/0.1Vcc
Read, Read status register
Standby current
ISB
10
μA
Vcc=5.5V
CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or =GND, SO=OPEN
Radiation resistance design is not made
Block diagram
CSB
SCK
SI
HOLDB
WPB
SO
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
INSTRUCTION
REGISTER
VOLTAGE
DETECTION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
STATUS REGISTER
ADDRESS
712bit *1
REGISTER
ADDRESS
712bit *1
DECODER
DATA
REGISTER
READ/WRITE
8bit
AMP
8bit
132K
EEPROM
*1 7bit: BR25H010-W
8bit: BR25H020-W
9bit: BR25H040-W
10bit: BR25H080-W
11bit: BR25H160-W
12bit: BR25H320-W
Fig.1 Block diagram
2/16

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Pin assignment and description
Vcc HOLDB SCK
SI
BR25H010-W
BR25H020-W
BR25H040-W
BR25H080-W
BR25H160-W
BR25H320-W
CSB SO WPB GND
Fig.2 Pin assignment diagram
Terminal name
Vcc
GND
CSB
SCK
SI
SO
Input/Output
Input
Input
Input
Output
HOLDB
Input
WPB
Input
Function
Power source to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Hold input
Command communications may be suspended temporarily
(HOLD status)
Write protect input
Write command is prohibited *1
Write status register command is prohibited.
*1:BR25H010/020/040-W
Operating timing characteristics
(Ta=-40~+125°C, unless otherwise specified, load capacity CL1=100pF)
Parameter
Symbol
2.5Vcc5.5V
Min. Typ. Max
Unit
SCK frequency
fSCK
– – 5 MHz
SCK high time
tSCKWH 85 – –
ns
SCK low time
tSCKWL 85 – –
ns
CSB high time
tCS
85 – –
ns
CSB setup time
tCSS
90 – –
ns
CSB hold time
tCSH
85 – –
ns
SCK setup time
tSCKS 90 – –
ns
SCK hold time
tSCKH 90 – –
ns
SI setup time
tDIS
20 – –
ns
SI hold time
tDIH
30 – –
ns
Data output delay time1
tPD1
– – 70 ns
Data output delay time1
(CL2=30pF)
Output hold time
tPD2
tOH
– – 55 ns
0 – – ns
Output disable time
HOLDB setting
setup time
tOZ
tHFS
– – 100 ns
0 – – ns
HOLDB setting
hold time
tHFH
40 – –
ns
HOLDB release
setup time
tHRS
0 – – ns
HOLDB release
hold time
tHRH
70 – –
ns
Time from HOLDB
to output High-Z
tHOZ
– – 100 ns
Time from HOLDB
To output change
SCK rise time
SCK fall time
OUTPUT
rise time
OUTPUT
fall time
Ж1
Ж1
Ж1
Ж1
tHPD
tRC
tFC
tRO
tFO
– – 70 ns
– – 1 μs
– – 1 μs
– – 50 ns
– – 50 ns
Write time
tE/W
– – 5 ms
Ж1 NOT 100% TESTED
AC measurement conditions
Parameter
Symbol
Limits
Min. Typ. Max
Unit
Load capacity 1
Load capacity 2
Input rise time
CL1 – – 100 pF
CL2 – – 30 pF
– – – 50 ns
Input fall time
– – – 50 ns
Input voltage
0.2Vcc/0.8Vcc
V
Input / Output judgment voltage
0.3Vcc/0.7Vcc
V
3/16
CSB
SCK
tCS
tSCKS
SI
SO
Sync data input / output
timing
tCSS
tSCKWL tSCKWH
tRC tFC
tDIS tDIH
High-Z
Fig.3 Input timing
SI is taken into IC inside in sync with data rise edge of SCK.
Input address and data from the most significant bit MSB.
tCS
CSB
tCSH tSCKH
SCK
SI
SO
tPD tOH
tRO,tFO tOZ
High-Z
Fig.4 Input / Output timing
SO is output in sync with data fall edge of SCK. Data is output
from the most significant bit MSB.
"H"
CSB
"L"
SCK
tHFS tHFH
SI n+1
SO Dn+1
tHOZ
Dn
tHRS tHRH
High-Z
tDIS
n
tHPD
Dn
n-1
Dn-1
HOLDB
Fig.5 HOLD timing

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Characteristic data (The following characteristic data are Typ. Values.)
6
5 Ta=-40℃
Ta=25℃
Ta=125℃
4
3
SPEC
2
1
0
0123456
Vcc[V]
Fig.6  "H" input voltage VIH(CSB,SCK,SI,HOLDB,WPB)
2.6
2.5
2.4
2.3
2.2
2.1
SPEC
Ta=-40℃
2 Ta=25℃
Ta=125℃
1.9
1.8
0
0.4 0.8
IOH[mA]
1.2
Fig.9 "H" output voltage VOH-IOH(Vcc=2.5V)
4
fSCK=5MHz
3 DATA=00h
2
Ta=-40℃
Ta=25℃
Ta=125℃
1
SPEC
SPEC
0
0123456
Vcc[V]
Fig.12 Current consumption at WRITE operation
ICC1,2
100
6
Ta=-40℃
5 Ta=25℃
Ta=125℃
4
3
2
1
Ta=-40℃
0.8 Ta=25℃
Ta=125℃
0.6
0.4
SPEC
1 0.2
SPEC
0
0123456
Vcc[V]
0
0
Fig.7  "L" input voltage VIL(CSB,SCK,SI,HOLDB,WPB)
123456
IOL[mA]
Fig.8 "L" output voltage VOL-IOL(Vcc=2.5V)
12
SPEC
10
8 Ta=-40℃
Ta=25℃
6 Ta=125℃
12
10
8 Ta=-40℃
Ta=25℃
Ta=125℃
6
SPEC
4
2
0
0123456
Vcc[V]
Fig.10 Input leak current ILI(CSB,SCK,SI,HOLDB,WPB)
4
2
0
0123456
VOUT[V]
Fig.11 Output leak current ILO(SO)(Vcc=5.5V)
2.5
fSCK=5MHz
2 DATA=AAh
SPEC
1.5
Ta=-40℃
1 Ta=25℃
Ta=125℃
0.5
SPEC
0
0123456
Vcc[V]
Fig.13 Consumption Current at READ operation
ICC3,4
100
12
10
Ta=-40℃
8 Ta=25℃
Ta=125℃
6
SPEC
4
2
0
0123456
Vcc[V]
Fig.14 Consumption current at standby operation ISB
100
10
1 Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
0.1
0
100
12345
Vcc[V]
Fig.15 SCK frequency fSCK
6
80
60 Ta=-40℃
Ta=25℃
Ta=125℃
40
SPEC
20
0
0
100
12345
Vcc[V]
Fig.16 SCK high time tSCKWH
6
80
60 Ta=-40℃
Ta=25℃
Ta=125℃
40
SPEC
20
0
0
100
12345
Vcc[V]
Fig.17 SCK low time tSCKWL
6
80
Ta=-40℃
60 Ta=25℃
Ta=125℃
40
SPEC
80
Ta=-40℃
60 Ta=25℃
Ta=125℃
40
SPEC
80
60 Ta=-40℃
Ta=25℃
40 Ta=125℃
SPEC
20 20 20
0
0123456
Vcc[V]
Fig.18 CSB high time tCS
0
012345
Vcc[V]
Fig.19 CSB setup time tCSS
6
0
0123456
Vcc[V]
Fig.20 CSB hold time tCSH
4/16

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30
Ta=-40℃
20 Ta=25℃
Ta=125℃
10
SPEC
0
-10
-20
0
1234
Vcc[V]
Fig.21 SI setup time tDIS
5
100
Ta=-40℃
80 Ta=25℃
Ta=125℃
60
SPEC
6
40
20
0
0123456
Vcc[V]
Fig.24 Data output delay time tPD2(CL-30pF)
80
60 Ta=-40℃
Ta=25℃
40 Ta=125℃
SPEC
20
0
-20
0123456
Vcc[V]
Fig.27 HOLDB release hold time tHRH
100
80
Ta=-40℃
Ta=25℃
Ta=125℃
60
40 SPEC
20
0
0123456
Vcc[V]
Fig.30 Output rise time tRO
50
Ta=-40℃
40 Ta=25℃
Ta=125℃
30
SPEC
20
10
0
0123456
Vcc[V]
Fig.22 SI hold time tDIH
120
100 SPEC
80 Ta=-40℃
Ta=25℃
60 Ta=125℃
40
20
0
012345
Vcc[V]
Fig.25 Output disable time tOZ
6
120
100
80 SPEC
60
40 Ta=-40℃
Ta=25℃
20 Ta=125℃
0
0123456
Vcc[V]
Fig.28 Time from HOLDB to output High-Z tHOZ
100
Ta=-40℃
80 Ta=25℃
Ta=125℃
60
40 SPEC
20
0
0123456
Vcc[V]
Fig.31 Output fall time tFO
100
80 SPEC
60
40
Ta=-40℃
20
Ta=25℃
Ta=125℃
0
0123456
Vcc[V]
Fig.23 Data output delay time tPD1(CL=100pF)
80
Ta=-40℃
60 Ta=25℃
Ta=125℃
40
20
SPEC
0
-20
0
80
123456
Vcc[V]
Fig.26 HOLDB setting hold time tHFH
60
40 SPEC
20
Ta=-40℃
Ta=25℃
0 Ta=125℃
-20
0123456
Vcc[V]
Fig.29 Time from HOLDB to output change tHPD
8
Ta=-40℃
Ta=25℃
6 Ta=125℃
SPEC
4 Ta=125℃
Ta=-40℃
Ta=25℃
2
0
0123456
Vcc[V]
Fig.32 Write cycle time tE/W
5/16