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Datasheet
Automotive Series Serial EEPROMs
125°C SPI BUS ICs BR25xxxxFamily
BR25Hxxx-WC Series
(1K 2K 4K 8K 16K 32K)
Description
BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method.
Features
„ High Speed Clock Action Up to 5MHz (Max)
„ Wait Function by HOLDB Terminal.
„ Part or Whole of Memory Arrays Settable as Read
Only Memory Area by Program.
„ 2.5 to 5.5V single power source action most suitable
for battery use.
„ Page Write Mode Useful for Initial Value Write at
Factory Shipment.
„ Highly Reliable Connection by Au Pad and Au Wire.
„ For SPI Bus Interface (CPOL, CPHA)=(0, 0), (1, 1)
„ Auto Erase and Auto End Function at Data Rewrite.
„ Low Current Consumption
¾ At Write Action (5V) : 1.5mA (Typ)
¾ At Read Action (5V) : 1.0mA (Typ)
¾ At Standby Action (5V) : 0.1µA (Typ)
„ Address Auto Increment Function at Read Action
„ Write Mistake Prevention Function
¾ Write Prohibition at Power on.
¾ Write Prohibition by Command Code (WRDI).
¾ Write Prohibition by WPB Pin.
¾ Write Prohibition Block Setting by Status
Registers (BP1, BP0)
¾ Write Mistake Prevention Function at Low
Voltage.
„ Data at Shipment Memory Array: FFh, Status
Register WPEN, BP1, BP0 : 0
„ Data Kept for 40 Years.
„ Data Rewrite Up to 1,000,000 Times.
„ AEC-Q100 Qualified
Packages W(Typ) x D(Typ) x H(Max)
SOP8
5.00mm x 6.20mm x 1.71mm
SOP-J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
Page Write
Number of pages
Product Number
16 Byte
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25Hxxx-WC Series
Capacity Bit Format
1Kbit
128×8
2Kbit
256×8
4Kbit
512×8
8Kbit
1K×8
16Kbit
2K×8
32Kbit
4Kx8
Type
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25H080-WC
BR25H160-WC
BR25H320-WC
32 Byte
BR25H080-WC
BR25H160-WC
BR25H320-WC
Power Source Voltage
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
SOP8
SOP-J8
TSSOP-B8
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Remarks
Impressed Voltage
VCC
-0.3 to +6.5
V
Permissible
Dissipation
0.56 (SOP8)
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
Pd
0.56 (SOP-J8)
W When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
0.41 (TSSOP-B8)
When using at Ta=25°C or higher, 3.3mW to be reduced per 1°C
Storage Temperature Range
Tstg
-65 to +150
°C
Operating Temperature
Range
Topr
-40 to +125
°C
Terminal Voltage
-
-0.3 to VCC+0.3
V
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics (VCC=2.5V to 5.5V)
Parameter
Number of Data Rewrite Times (Note1)
Data Hold Years (Note1)
(Note1) Not 100% TESTED
Min
1,000,000
500,000
300,000
40
20
Limits
Typ
-
-
-
-
-
Recommended Operating Ratings
Parameter
Symbol
Power Source Voltage
VCC
Input Voltage
VIN
Limits
2.5 to 5.5
0 to VCC
Unit
Max
Condition
- Times Ta85°C
- Times Ta105°C
- Times Ta125°C
- Years Ta25°C
- Years Ta125°C
Unit
V
Input / Output Capacity (Ta=25°C, Frequency=5MHz)
Parameter
Symbol
Min
Input Capacity (Note1)
Output Capacity (Note1)
CIN
COUT
-
-
(Note1) Not 100% TESTED
Max
8
8
Unit Conditions
pF VIN=GND
VOUT=GND
Electrical Characteristics (Unless otherwise specified, Ta=-40°C to +125°C, VCC=2.5V to 5.5V)
Parameter
Symbol
Limits
Min Typ Max
Unit
Conditions
“H” Input Voltage
VIH 0.7xVCC - VCC+0.3 V 2.5VVCC5.5V
“L” Input Voltage
VIL -0.3 - 0.3xVCC V 2.5VVCC5.5V
“L” Output Voltage
VOL 0 - 0.4 V IOL=2.1mA
“H” Output Voltage
VOH VCC-0.5 - VCC V IOH=-0.4mA
Input Leak Current
ILI -10 - 10 µA VIN=0 to VCC
Output Leak Current
ILO -10 - 10 µA VOUT=0 to VCC, CSB=VCC
VCC=2.5V, fSCK=5MHz, tE/W=5ms
ICC1 - - 2.0 mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Current Consumption at Write
Byte write, Page write, Write status register
Action
VCC=5.5V, fSCK=5MHz, tE/W=5ms
ICC2 - - 3.0 mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Byte write, Page write, Write status register
VCC=2.5V, fSCK=5MHz
ICC3 - - 1.5 mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Current Consumption at Read
Read, Read status register
Action
VCC=5.5V, fSCK=5MHz
ICC4 - - 2.0 mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Read, Read status register
Standby Current
VCC=5.5V
ISB - - 10 µA CSB=HOLDB=WPB=VCC, SCK=SI=VCC or =GND,
SO=OPEN
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)
Datasheet
Operating Timing Characteristics
(Ta=-40°C to +125°C, unless otherwise specified, load capacity CL1=100pF)
Parameter
Symbol
2.5VCC5.5V
Min Typ
SCK Frequency
fSCK
-
-
SCK High Time
tSCKWH
85
-
SCK Low Time
tSCKWL
85
-
CSB High Time
tCS 85
-
CSB Setup Time
tCSS
90
-
CSB Hold Time
tCSH
85
-
SCK Setup Time
tSCKS
90
-
SCK Hold Time
tSCKH
90
-
SI Setup Time
tDIS 20
-
SI Hold Time
tDIH 30
-
Data Output Delay Time1
tPD1
-
-
Data Output Delay Time2 (CL2=30pF)
tPD2
-
-
Output Hold Time
tOH 0
-
Output Disable Time
tOZ -
-
HOLDB Setting Setup Time
tHFS
0
-
HOLDB Setting Hold Time
tHFH
40
-
HOLDB Release Setup Time
tHRS
0
-
HOLDB Release Old Time
tHRH
70
-
Time from HOLDB to Output High-Z
tHOZ
-
-
Time from HOLDB To Output Change
SCK Rise Time (Note1)
SCK Fall Time (Note1)
OUTPUT Rise Time (Note1)
OUTPUT Fall Time (Note1)
tHPD
tRC
tFC
tRO
tFO
-
-
-
-
-
-
-
-
-
-
Write Time
(Note1) NOT 100% TESTED
tE/W -
-
Max
5
-
-
-
-
-
-
-
-
-
70
55
-
100
-
-
-
-
100
70
1
1
50
50
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ms
Sync Data Input / Output Timing
CSB
SCK
tCS
tSCKS
SI
SO
tCSS
tSCKWL tSCKWH
tDIS tDIH
High-Z
Figure 1. Input Timing
tRC
tFC
SI is taken into IC inside in sync with data rise
edge of SCK. Input address and data from the
most significant bit MSB.
"H"
CSB
"L"
SCK
tHFS tHFH
SI n+1
SO Dn+1
tHOZ
Dn
HOLDB
tHRS tHRH
High-Z
tDIS
n
tHPD
Dn
Figure 3. HOLD timing
n-1
Dn-1
CSB
SCK
SI
SO
tPD tOH
tCS
tCSH tSCKH
tRO,tFO tOZ
High-Z
Figure 2. Input / Output Timing
SO is output in sync with data fall edge of SCK.
Data is output from the most significant bit MSB.
AC Measurement Conditions
Parameter
Symbol
Limits
Min Typ Max
Load Capacity 1
CL1 - - 100
Load Capacity 2
CL2 - - 30
Input Rise Time
- - - 50
Input Fall Time
- - - 50
Input Voltage
Input / Output
Judgment Voltage
-
-
0.2VCC/0.8VCC
0.3VCC/0.7VCC
Unit
pF
pF
ns
ns
V
V
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)
Block Diagram
Datasheet
CSB
SCK
SI
HOLDB
WPB
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
INSTRUCTION
REGISTER
VOLTAGE
DETECTION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
(Note1)
7bit: BR25H010-WC
8bit: BR25H020-WC
9bit: BR25H040-WC
10bit: BR25H080-WC
11bit: BR25H160-WC
12bit: BR25H320-WC
STATUS REGISTER
ADDRESS
( Note1)
712bit
REGISTER
ADDRESS
(No te 1)
712bit
DECODER
DATA
REGISTER
READ/WRITE
8bit
AMP
8bit
132K
EEPROM
SO
Pin Configuration
Figure 4. Block diagram
Vcc HOLDB SCK
SI
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25H080-WC
BR25H160-WC
BR25H320-WC
Pin Description
Terminal name
VCC
GND
CSB
SCK
SI
SO
HOLDB
Input/Output
-
-
Input
Input
Input
Output
Input
WPB
Input
(Note1) BR25H010/020/040-WC
CSB SO WPB GND
Figure 5. Pin Configuration
Function
Power source to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Hold input
Command communications may be suspended temporarily (HOLD
status)
Write protect input
Write command is prohibited (Note1)
Write status register command is prohibited.
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)
Typical Performance Curves
Datasheet
Figure 6. “H” Input Voltage vs Supply Voltage
Figure 7. “L” Input Voltage vs Supply Voltage
Figure 8. “L” Output Voltage vs Output Current (Vcc=2.5V)
Figure 9. "H" Output Voltage vs Output Current (Vcc=2.5V)
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© 2012 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0R1R0G100060-1-2
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