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Features
±2.0% Tolerance on Breakdown Voltage
Small, Low Profile Surface Mount Package
Flat Lead Package Design for Low Profile and High Power
Dissipation
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
BZT585B2V4T - BZT585B43T
SURFACE MOUNT PRECISION ZENER DIODE
Mechanical Data
Case: SOD523
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Band
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.001 grams (approximate)
Top View
Ordering Information (Note 4)
Part Number
(Type Number)-7* (Note 4)
Case
SOD523
Packaging
3000/Tape & Reel
*Add “-7” to the appropriate type number in Electrical Characteristics Table, example: 6.2V Zener = BZT585B6V2T-7.
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
xx
xx = Product Type Marking Code
(See Electrical Characteristics Table)
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
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March 2014
© Diodes Incorporated

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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Forward Voltage
Continuous Forward Current
@ IF = 10mA
@ IF = 100mA
Symbol
VF
IF
BZT585B2V4T - BZT585B43T
Value
0.9
1.1
200
Unit
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
Note:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can
be found on our website at http://www.diodes.com.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Type
Number
BZT585B2V4T
BZT585B2V7T
BZT585B3V3T
BZT585B3V6T
BZT585B3V9T
BZT585B4V3T
BZT585B4V7T
BZT585B5V1T
BZT585B5V6T
BZT585B6V2T
BZT585B6V8T
BZT585B7V5T
BZT585B8V2T
BZT585B9V1T
BZT585B10T
BZT585B11T
BZT585B12T
BZT585B13T
BZT585B15T
BZT585B16T
BZT585B18T
BZT585B20T
BZT585B22T
BZT585B24T
BZT585B27T
BZT585B30T
BZT585B33T
BZT585B36T
BZT585B39T
BZT585B43T
Marking
Codes
Zener Voltage Range
(Note 6)
Maximum Zener
Impedance (Note 7)
VZ @ IZT
IZT
ZZT @ ZZK @
IZT IZK
IZK
Nom (V) Min (V) Max (V) mA
Ω
mA
3C
2.4 2.35 2.45 5 100 400
1
3E
2.7 2.65 2.75 5 100 450
1
3H
3.3 3.23 3.37 5 95 500
1
3J
3.6 3.53 3.67 5 90 500
1
3K
3.9 3.82 3.98 5 90 500
1
3L
4.3 4.21 4.39 5 90 600
1
3M
4.7 4.61 4.79 5 80 500
1
3N
5.1 5.00 5.20 5 60 480
1
3P
5.6 5.49 5.71 5 40 400
1
3S
6.2 6.08 6.32 5 10 150
1
3T
6.8 6.66 6.94 5 15
80
1
3U
7.5 7.35 7.65 5 10
80
1
3V
8.2 8.04 8.36 5 10
80
1
3X
9.1 8.92 9.28 5 10 100
1
3Y
10
9.80 10.20 5 10
150
1
3Z
11 10.78 11.22 5 10 150
1
4A
12 11.76 12.24 5 10 150
1
4B
13 12.74 13.26 5 10 170
1
4D
15 14.70 15.30 5 15 200
1
4E
16 15.68 16.32 5 40 200
1
4F
18 17.64 18.36 5 45 225
1
4G
20 19.60 20.40 5 55 225
1
4H
22 21.56 22.44 5 55 250
1
4J
24 23.52 24.48 5 70 250
1
4K 27 26.46 27.54 2 80 300 0.5
4M 30 29.40 30.60 2 80 300 0.5
4N 33 32.34 33.66 2 80 325 0.5
4P 36 35.28 36.72 2 90 350 0.5
4R 39 38.22 39.78 2 130 350 0.5
4S 43 42.14 43.86 2 150 375 0.5
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. f = 1kHz.
Temperature
Coefficient
TC @ IZT
Typical
(mV/°C)
-1.3
-1.4
-1.8
-1.9
-1.9
-1.7
-1.2
-0.5
1.0
2.2
3.0
3.8
4.7
5.8
7.0
8.2
9.5
10.7
13.2
14.4
16.9
19.4
21.9
24.4
25.4
31.1
36.7
42.4
48.1
55.7
Total Capacitance
CT @ f = 1MHz,
VR = 0V
Max
(pF)
450
440
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
90
80
70
60
55
50
50
45
45
45
40
Maximum
Reverse
Current
(Note 6)
IR @ VR
µA V
50 1
20 1
51
51
31
31
32
22
12
34
24
15
0.7 5
0.5 6
0.2 7
0.1 8
0.1 8
0.1 8
0.05 10.5
0.05 11.2
0.05 12.6
0.05 14.0
0.05 15.4
0.05 16.8
0.05 18.9
0.05 21.0
0.05 23.1
0.05 25.2
0.05 27.3
0.05 30.1
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
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BZT585B2V4T - BZT585B43T
0.4 1000
Note 5
TA = 150°C
0.3
100
TA = 125°C
0.2
0.1
00 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 1 Power Derating Curve
50 TJ = 25°C
6V2
150
40
2V4 2V7
30
10
10
TA = 85°C
1
TA = 25°C
TA = -55°C
0.1
200 400 600 800 1000 1200 1400 1600
VF, INSTANTANEOUS FORWARD VOLTAGE(mV)
Figure 2 Typical Forward Characteristics
30
TJ = 25°C
15
20 30
22 27
24
36
33
39
43
20
20
10
10
00 1 2 3 4 5 6 7 8 9 10 11 12
VZ, ZENER VOLTAGE (V)
Figure 3 Typical Zener Breakdown Characteristics
010 20 30 40 50
VZ, ZENER VOLTAGE (V)
Figure 4 Typical Zener Breakdown Characteristics
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
CH
A
B
L
M
K
SOD523
Dim Min Max
A 0.25 0.35
B 0.70 0.90
C 1.50 1.70
H 1.10 1.30
K 0.55 0.65
L 0.10 0.30
M 0.10 0.12
All Dimensions in mm
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
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BZT585B2V4T - BZT585B43T
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X1
X
Y
G
Dimensions
G
X
X1
Y
Value (in mm)
0.80
0.60
2.00
0.70
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
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March 2014
© Diodes Incorporated