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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJD3055
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
·Complement to Type MJD2955
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
70 V
VCEO Collector-Emitter Voltage
60 V
VEBO
Emitter-base Voltage
5V
IC Collector Current-Continuous
10 A
IB Base Current
6A
Collector Power Dissipation@TC=25
20
PC
Collector Power Dissipation@Ta=251.75
W
Tj Junction Tmperature
Tstg Storage Temperature Range
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 /W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD3055
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO Collector Cutoff Current
VCE= 30V; IB=0
ICBO Collector Cutoff Current
VCB= 100V; IE=0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
fT Current-Gain—Bandwidth Product
Pulse Test: PW≤300μs, Duty Cycle≤2.0%
IC= 0.5A ; VCE= 10V;ftest= 1.0MHz
MIN MAX UNIT
60 V
1.1 V
8.0 V
1.8 V
50 uA
0.02 mA
0.5 mA
20 100
5
2.0 MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark

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isc Silicon NPN Power Transistors
Outline Drawing
INCHANGE Semiconductor
MJD3055
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark